Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Haruo Sunakawa"'
Autor:
Hiroshi Goto, Atsushi A. Yamaguchi, Shuichi Shoji, Akira Usui, Hidetoshi Shinohara, Akiko Okada, Haruo Sunakawa, Jun Mizuno, Toshiharu Matsueda
Publikováno v:
Journal of Photopolymer Science and Technology. 26:69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6dd6510ef0da787f3baa34868ab76ee
https://doi.org/10.2494/photopolymer.26.69
https://doi.org/10.2494/photopolymer.26.69
Autor:
Yamamoto Kazutomi, Norihiko Sumi, Huiyuan Geng, Atsushi A. Yamaguchi, Akira Usui, Haruo Sunakawa
Publikováno v:
Journal of Crystal Growth. 350:44-49
Freestanding GaN crystals were fabricated by hydride vapor phase epitaxy using a random-islands facet-initiated epitaxial overgrowth technique. In this method, small micrometer sized GaN islands were firstly deposited on a TiC buffer layer on a sapph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8dd519d863873e6a63076bae879bbf
https://doi.org/10.1016/j.jcrysgro.2011.12.020
https://doi.org/10.1016/j.jcrysgro.2011.12.020
Publikováno v:
physica status solidi (a). 206:1160-1163
An m-plane GaN layer with a thickness of approximately 500 μm was successfully obtained on a conventional m-plane sapphire substrate with a diameter of 2 inches. The GaN layer was grown by hydride vapor phase epitaxy (HVPE) on a buffer layer of low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7b0aba1993bd2b01be7aeaa15c4784
https://doi.org/10.1002/pssa.200880834
https://doi.org/10.1002/pssa.200880834
Autor:
Naotaka Kuroda, Akira Usui, George D. Watkins, Masashi Mizuta, L. S. Vlasenko, Cornel Bozdog, A. Zakrzewski, P. Johannesen, Kim H. Chow, Haruo Sunakawa
Publikováno v:
Physica B: Condensed Matter. :25-31
After a brief summary of possible evidence for the existence of interstitials or vacancies in as-grown GaN, the results of a study using 2.5 MeV electron irradiation to produce the defects are described. After in situ irradiation at 4.2 K, interstiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4950cfd862f3c536fd49d49d1ca299
https://doi.org/10.1016/j.physb.2003.09.004
https://doi.org/10.1016/j.physb.2003.09.004
Publikováno v:
physica status solidi (a). 194:554-558
A novel technique for fabricating large-diameter freestanding GaN wafers has been developed. This technique uses a porous GaN template with a TiN nano-net on top as the starting substrate for hydride vapor-phase epitaxy (HVPE) growth. A mechanically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f1838f7e5de747e8b0a7af4192752c
https://doi.org/10.1002/1521-396x(200212)194:2<554::aid-pssa554>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<554::aid-pssa554>3.0.co
Autor:
Akira Usui, Kenji Kobayashi, Haruo Sunakawa, Takeshi Eri, Toshinari Ichihashi, Masatomo Shibata, Yuichi Oshima
Publikováno v:
physica status solidi (a). 194:572-575
We investigate the role of a TiN film on epitaxial growth and crystal quality in the void-assisted separation (VAS) method. Plan-view TEM images show the TiN film contains numerous nanometer-scale holes, resulting in a nano-net structure. X-ray rocki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a55a53f307d3945d6506160984ecc49
https://doi.org/10.1002/1521-396x(200212)194:2<572::aid-pssa572>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<572::aid-pssa572>3.0.co
Publikováno v:
Optics Communications. 189:103-106
Using intense femtosecond laser (150 fs, 790 nm, 1 kpps), precise and high-speed laser ablation etching of hexagonal GaN is demonstrated. Etch rate above the ablation threshold is measured to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1b4c12f043a83351693a3bbddb4817
https://doi.org/10.1016/s0030-4018(01)01002-1
https://doi.org/10.1016/s0030-4018(01)01002-1
Publikováno v:
Physical Review B. 62:12923-12926
Electron paramagnetic resonance of ${\mathrm{Cu}}^{2+}{(d}^{9})$ has been detected optically in the visible and near-infrared luminescence of wurtzite GaN. Its effective $\mathcal{S}=1/2$ spin Hamiltonian parameters are ${g}_{\ensuremath{\Vert}}=\ifm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e344325aca3ee109bf31fcb744736775
https://doi.org/10.1103/physrevb.62.12923
https://doi.org/10.1103/physrevb.62.12923
Publikováno v:
Journal of Electron Microscopy. 49:323-330
We have investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) the relationship between surface morphological evolution and dislocation propagation in GaN films formed by epitaxial lateral overgrowth (ELO) in hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0200e9362311b6c6a62764e8e968123a
https://doi.org/10.1093/oxfordjournals.jmicro.a023812
https://doi.org/10.1093/oxfordjournals.jmicro.a023812
Autor:
Atsushi Yamaguchi, Y. Hisanaga, Chiaki Sasaoka, Masashi Mizuta, Akira Usui, Haruo Sunakawa, Akitaka Kimura, Masaru Kuramoto, Naotaka Kuroda, Masaaki Nido
Publikováno v:
physica status solidi (a). 176:35-38
The continuous-wave operation at room temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on facet-initiated epitaxial lateral overgrowth (FIELO) GaN substrates with a backside n-contact. The threshold curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dccd4b5fbd76120e4a20fac3a441cb80
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<35::aid-pssa35>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<35::aid-pssa35>3.0.co