Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Haruo Nakazawa"'
Autor:
Eiji Higurashi, Haruo Nakazawa, Fengwen Mu, Takehito Shimatsu, Yinghui Wang, Miyuki Uomoto, Yoshikazu Takahashi, Tadatomo Suga, Kenichi Iguchi
Publikováno v:
Applied Surface Science. 465:591-595
In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two SiC wafers were bonded via an intermediate nickel (Ni) nano-film at room temperature withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd044ba25f58e04df89be8eaebd15fbe
https://doi.org/10.1016/j.apsusc.2018.09.050
https://doi.org/10.1016/j.apsusc.2018.09.050
Autor:
Masaaki Tachioka, Toshiyuki Takamatsu, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Tetsuji Arai, Haruo Nakazawa, Keisuke Arimoto, Kiyokazu Nakagawa, Masaaki Ogino, Junji Yamanaka
Publikováno v:
Journal of Materials Science and Chemical Engineering. :35-41
We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886347d4b906d3edc4c52d98aa87d449
https://doi.org/10.4236/msce.2017.51005
https://doi.org/10.4236/msce.2017.51005
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A SiC-SiC temporary bonding compatible with rapid thermal annealing at $\sim 1000^{\circ } \mathrm{C}$ has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1265eea91883e3d74b1d2c4c59bc3a13
https://doi.org/10.23919/ltb-3d.2019.8735291
https://doi.org/10.23919/ltb-3d.2019.8735291
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b47c254bef567750ed17ab36e65bdc4
https://doi.org/10.23919/ltb-3d.2019.8735211
https://doi.org/10.23919/ltb-3d.2019.8735211
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P451-P456
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ddf28660a935d9918192e77ed17022d
https://doi.org/10.1149/2.0011609jss
https://doi.org/10.1149/2.0011609jss
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
In this study, we developed a 700-V reverse- blocking insulated gate bipolar transistor (RB-IGBT), which is suitable for a large-capacity advanced T-type neutral- point-clamped (AT-NPC) three-level power conversion system. As this device can tolerate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aab0554ec48b102f6281e50f45bb45e
https://doi.org/10.23919/ipec.2018.8507718
https://doi.org/10.23919/ipec.2018.8507718
Autor:
Masahisa Fujino, Fengwen Mu, Yoshikazu Takahashi, Haruo Nakazawa, Tadatomo Suga, Kenichi Iguchi
Publikováno v:
2017 18th International Conference on Electronic Packaging Technology (ICEPT).
This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and compos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9225bc06ef66b3b5f750e2b0281cc044
https://doi.org/10.1109/icept.2017.8046538
https://doi.org/10.1109/icept.2017.8046538
Autor:
Fengwen Mu, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a287d4496f06bea98e77f5e8989b299
https://doi.org/10.23919/ltb-3d.2017.7947399
https://doi.org/10.23919/ltb-3d.2017.7947399
Publikováno v:
Materials Science in Semiconductor Processing. 16:923-927
The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si 3 N 4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b27185bf4b3ffef46a503ff39fdc6f
https://doi.org/10.1016/j.mssp.2013.01.020
https://doi.org/10.1016/j.mssp.2013.01.020
Publikováno v:
IEEJ Journal of Industry Applications. 2:323-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3083b5f548879ba3059217812fc833a7
https://doi.org/10.1541/ieejjia.2.323
https://doi.org/10.1541/ieejjia.2.323