Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Haruki Tanigawa"'
Autor:
Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ace6dbd9edfe4f091ad69295ecdb66fa
https://doi.org/10.7567/ssdm.2020.h-3-04
https://doi.org/10.7567/ssdm.2020.h-3-04
Autor:
Kentarou Matsuura, Kuniyuki Kakushima, Kazuo Tsutsui, K. Parto, Haruki Tanigawa, Masaya Hamada, Atsushi Hori, Wei Cao, Takuya Hamada, K. Banerjee, H. Wakabayashi, Atsushi Ogura, Takamasa Kawanago, Iriya Muneta, Takuro Sakamoto
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS 2 ) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi 2 ) contact which show n-type-normally-off operation in accum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e18403d696cf66077db37057f6a4b8
https://doi.org/10.23919/iwjt.2019.8802622
https://doi.org/10.23919/iwjt.2019.8802622
Autor:
Hitoshi Wakabayashi, Yusuke Mochizuki, Kazuo Tsutsui, Masaya Hamada, Satoshi Igarashi, Haruki Tanigawa, Kuniyuki Kakushima, Kentaro Matsuura, Iriya Muneta
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBH04
Electrical contact characteristics between self-aligned titanium silicide (TiSi2) and sputtered-molybdenum disulfide (MoS2) films were newly demonstrated. In contrast with metal contacts, the surface of the TiSi2 bottom-contact was cleaned by using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85c3353b6ec6086782703e3aa2091742
https://doi.org/10.35848/1347-4065/abd535
https://doi.org/10.35848/1347-4065/abd535
Autor:
Atsushi Hori, Kazuo Tsutsui, Takuya Hamada, Takuro Sakamoto, Atsushi Ogura, Hitoshi Wakabayashi, Haruki Tanigawa, Takamasa Kawanago, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Masaya Hamada
Publikováno v:
Japanese Journal of Applied Physics. 59:080906
We demonstrate chip-level integrated n-type metal–insulator–semiconductor field effect transistors with a sputtered molybdenum disulfide (MoS2) thin channel and titanium nitride top-gate electrode, all defined by optical lithography. The devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31595b5e06360173126c3411d880a705
https://doi.org/10.35848/1347-4065/aba9a3
https://doi.org/10.35848/1347-4065/aba9a3
Autor:
Takuya Hoshii, Haruki Tanigawa, Kentaro Matsuura, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Iriya Muneta
Publikováno v:
Japanese Journal of Applied Physics. 59:SMMC01
This study demonstrates atomic layer deposition of an Al2O3 film on a sputtered-MoS2 film and capacitance–voltage (C–V) characteristics of TiN top-gated metal–insulator–semiconductor field-effect-transistors with a sputtered-MoS2 channel. A u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2760eea977fd3913d8bf3537d36b651
https://doi.org/10.35848/1347-4065/ab7fea
https://doi.org/10.35848/1347-4065/ab7fea
Autor:
Takuya Hoshii, Kentaro Matsuura, Hitoshi Wakabayashi, Takumi Ohashi, Haruki Tanigawa, Masaya Hamada, Kazuo Tsutsui, Kuniyuki Kakushima, Iriya Muneta, Takuro Sakamoto
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Layered MoS 2 film was formed on a SiO 2 substrate by sputtering and Al 2 O 3 film was deposited as passivation film on the MoS 2 film, an annealing was performed in sulfur atmosphere in order to compensate sulfur defects and improve crystallinity. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dbd26942c264a7a44868b0efb9bf26
https://doi.org/10.1109/s3s.2018.8640213
https://doi.org/10.1109/s3s.2018.8640213