Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Haruki Ryoken"'
Autor:
Haruki Ryoken, Naoki Ohashi, Keisuke Kobayashi, Hajime Haneda, Hideki Yoshikawa, Isao Sakaguchi, Takeo Osawa, Yutaka Adachi, Shigenori Ueda
Publikováno v:
Key Engineering Materials. 388:3-6
(Mg,Zn)O films were grown on Zn- and O-face ZnO single crystal substrates by pulsed laser deposition. The surface morphologies of the films grown on the Zn- and O-face substrates were quite different, indicating that no domain inversion occurred in b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bff8f272a38070ed8a44936338b815b
https://doi.org/10.4028/www.scientific.net/kem.388.3
https://doi.org/10.4028/www.scientific.net/kem.388.3
Autor:
Shunichi Hishita, Naoki Ohashi, Hajime Haneda, Isao Sakaguchi, Yutaka Adachi, Haruki Ryoken, Takeshi Ohgaki
Publikováno v:
Key Engineering Materials. 320:103-106
The defect structure of undoped ZnO and (Zn1-x,Mgx)O solid-solution films were deposited on YSZ substrate with pulsed laser deposition (PLD) to investigate defect equilibria in those films. In particular, the effects of thermal treatment on the struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3818645fdcb68b734fe99cef5e069518
https://doi.org/10.4028/www.scientific.net/kem.320.103
https://doi.org/10.4028/www.scientific.net/kem.320.103
Publikováno v:
Thin Solid Films. :184-187
ZnO thin films were deposited on a-plane alumina by electron cyclotron resonance-assisted CVD method at several substrate temperatures. The crystal orientation of ZnO thin film strongly depended on the substrate temperature. The full width at half ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ede2acac5818e3455bb1627543e4235
https://doi.org/10.1016/j.tsf.2005.08.021
https://doi.org/10.1016/j.tsf.2005.08.021
Autor:
Isao Sakaguchi, Takeshi Ohgaki, Hajime Haneda, Naoki Ohashi, Tadashi Takenaka, Haruki Ryoken, Yoshitaka Adachi
Publikováno v:
Key Engineering Materials. 301:75-78
The defect structure of undoped and Al-doped ZnO films deposited by pulse laser deposition was investigated to understand the charge compensation mechanism in those films. Particularly, the effect of oxidation assist, i.e., O2 gas or oxygen radicals,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06f048a9952b35fd9cbb57b47bd8240
https://doi.org/10.4028/www.scientific.net/kem.301.75
https://doi.org/10.4028/www.scientific.net/kem.301.75
Autor:
Shigeaki Sugimura, Naoki Ohashi, Takeshi Ohgaki, Takashi Sekiguchi, Hajime Haneda, Haruki Ryoken, Isao Sakaguchi
Publikováno v:
Key Engineering Materials. 301:79-82
Gallium nitride (GaN) and indium nitride (InN) films were grown on a zinc oxide (ZnO) single crystalline substrate with a (0001) orientation using molecular beam epitaxy. The interfacial structure and relaxation mechanism of the lattice mismatch at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38598a893570e532e2384c577a21dab1
https://doi.org/10.4028/www.scientific.net/kem.301.79
https://doi.org/10.4028/www.scientific.net/kem.301.79
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 53:11-20
Diffusion phenomena and lattice defects in ceramics are discussed. The properties of ceramics are classified broadly into tow groups, one is that the properties are controlled by crystal structure and composition, called "intrinsic" properties. The o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0948cb5d676ffd2183ba2f804ad3f0e
https://doi.org/10.2497/jjspm.53.11
https://doi.org/10.2497/jjspm.53.11
Autor:
Naoki Wakiya, Yuji Nishi, Akinori Higuchi, Noriyoshi Shibata, Kazuo Shinozaki, Haruki Ryoken, Hajime Haneda, Nobuyasu Mizutani, Toshimasa Suzuki, Keiichi Fukunaga
Publikováno v:
Key Engineering Materials. 301:257-260
Diffusion behavior at the interface of (001)-epitaxially grown (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si thin films was examined by use of secondary ion-microprobe mass spectrometer (SIMS) and transmission electron microscope (TEM) attached with ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0878e863428c2369ebdef08b4727f246
https://doi.org/10.4028/www.scientific.net/kem.301.257
https://doi.org/10.4028/www.scientific.net/kem.301.257
Publikováno v:
Journal of Crystal Growth. 287:134-138
The structural properties of binary alloy compounds of the ZnO-MgO system have been investigated. Pulsed laser deposition (PLD) yielded single-phase films of wurtzite-type (Zn 1-x Mg x )O within the compositional range of x≤0.47. After annealing, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f71a3b12f76e200eac62dbfcfaf62f71
https://doi.org/10.1016/j.jcrysgro.2005.10.056
https://doi.org/10.1016/j.jcrysgro.2005.10.056
Autor:
Kazuya Terabe, Isao Sakaguchi, F. Yamamoto, Shunji Takekawa, Xiaolian Liu, Haruki Ryoken, Hajime Haneda, J. Ichikawa, Masaru Nakamura, R. Mohan Kumar, K. Kitamura
Publikováno v:
Journal of Crystal Growth. 287:472-477
Ti-diffused planer waveguides have been fabricated on pure and Mg-doped near stoichiometric lithium niobate (SLN). Secondary ion mass spectroscopy method was applied to study the Ti diffusion in 1 mol% Mg-doped Z-cut SLN crystal. 100 nm Ti film has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c3f7278696d785003b384186be1646a
https://doi.org/10.1016/j.jcrysgro.2005.11.069
https://doi.org/10.1016/j.jcrysgro.2005.11.069
Autor:
Shunichi Hishita, Isao Sakaguchi, Haruki Ryoken, Hajime Haneda, Naoki Ohashi, Takashi Sekiguchi
Publikováno v:
Journal of Materials Research. 20:2866-2872
Zinc oxide (ZnO) films doped with aluminum (Al) were deposited with a pulsed laser deposition technique to characterize the charge compensation phenomena in ZnO. In particular, oxygen radical (O*) irradiation during film deposition was used to modify
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c66e1e3b10398dc60986aa75890635c8
https://doi.org/10.1557/jmr.2005.0353
https://doi.org/10.1557/jmr.2005.0353