Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Haruki Enomoto"'
Autor:
Hanh Duc Nguyen, Haruki Enomoto, Tadashi Okumura, Keita Inoue, Yuki Atsumi, Nobuhiko Nishiyama, Simon Kondo, Shigehisa Arai
Publikováno v:
The 21th International Conference on Indium Phosphide and Related Materials (IPRM2009). (No. ThA1. 4)
500×150 nm2 GaInAsP wired waveguides were fabricated on a Si substrate by adhesive bonding using benzocyclobutene (BCB). The propagation loss of 2.1 dB/mm and 1.5 µm-radius bending loss of less than 1.0 dB/90° were obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe6034b34698be9210deaaef53a53afd
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100591357
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100591357
Autor:
Haruki Enomoto, Nobuhiko Nishiyama, Takeo Maruyama, Shigehisa Arai, Shigeo Tamura, Keita Inoue
Publikováno v:
2008 International Nano-Optoelectronics Workshop.
By applying a double layered EB resist containing C60, we could form fine vertical shaped rectangular Si wire waveguide on silicon on insurator (SOI) by parallel plate reactive-ion-etching (RIE). The propagation loss of single-mode Si wire waveguide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9ced5bd4f0899da51db2b32f36e6fd
https://doi.org/10.1109/inow.2008.4634546
https://doi.org/10.1109/inow.2008.4634546
Autor:
Keita Inoue, Haruki Enomoto, S. Sakamoto, Nobuhiko Nishiyama, Hai Duc Nguyen, Tadashi Okumura, Simon Kondo, Shigehisa Arai
Publikováno v:
2008 International Nano-Optoelectronics Workshop.
SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GalnAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e49650b5e554c76bca4e3848b25cd54d
https://doi.org/10.1109/inow.2008.4634549
https://doi.org/10.1109/inow.2008.4634549
Autor:
Shigeo Tamura, Keita Inoue, Shigehisa Arai, Takeo Maruyama, S. Sakamoto, Haruki Enomoto, Nobuhiko Nishiyama, Dhanorm Plumwongrot
Publikováno v:
Jpn. J. Appl. Phys.. 48(no. 3):030208
Loss reduction methods for single-mode photonic wire in silicon-on-insulator were investigated, with a Si core size of 200 × 440 nm2, fabricated with electron beam lithography and dry etching, using a double layer of electron beam (EB) resist mask.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83dea6c756858f6da5e05a5c7b92f93f
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100586716
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100586716