Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Haruka Kusai"'
Autor:
Reika Ichihara, Yusuke Higashi, Kunifumi Suzuki, Haruka Kusai, Yoko Yoshimura, Takamasa Hamai, Yuta Kamiya, Kota Takahashi, Kazuhiro Matsuo, Yasushi Nakasaki, Hidenori Miyagawa, Masamichi Suzuki, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Autor:
Hidenori Miyagawa, Haruka Kusai, Riichiro Takaishi, Tomoya Kawai, Yuuichi Kamimuta, Toshiya Murakami, Keiko Ariyoshi, Takanori Asano, Masakazu Goto, Makoto Fujiwara, Yuichiro Mitani, Tomoyuki Obu, Hideaki Aochi
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Masumi Saitoh, Yuta Kamiya, Kunifumi Suzuki, Kazuhiro Matsuo, Kiwamu Sakuma, Keisuke Takano, Haruka Kusai, Hidenori Miyazawa, Keisuke Akari, Yuuichi Kamimuta, Keiko Ariyoshi, Kota Takahashi, Reika Ichihara
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We re-examine the dominant factors of the memory window (MW) and reliability of HfO 2 FeFET using a new technique to extract both spontaneous polarization $(\mathrm{P}_{\mathrm{s}})$ and interface trap charges $(\mathrm{Q}_{\mathrm{t}})$ by one-time
Autor:
Hidenori Miyagawa, Toshiya Murakami, Tomoya Kawai, Riichiro Takaishi, Masakazu Goto, Hideaki Aochi, Haruka Kusai, Yuuichi Kamimuta, Tomoyuki Obu, Takanori Asano, Keiko Ariyoshi, Makoto Fujiwara, Yuichiro Mitani
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In order to improve the channel conductance of 3D flash memory cell, metal-assisted solid-phase single crystallization process has been demonstrated for the first time. Metal induced lateral crystallization (MILC) process is well-known for the thin f
Publikováno v:
ECS Transactions. 64:113-123
The interface-state generation mechanism and its impact on reliability properties, such as endurance and data retention, in MONOS devices have been studied. The charge measurement technique we developed has demonstrated that holes injected during era
Publikováno v:
ECS Transactions. 35:417-446
Carrier trapping and reliability characteristics during the cycling operation of metal-oxide-nitride-oxide-semiconductor (MONOS) devices with a high-k blocking layer (Al2O3) have been studied by measuring the injected charge during programming and er
Autor:
Teruya Shinjo, Haruka Kusai, Shinji Miwa, Masashi Shiraishi, Yoshishige Suzuki, Masaki Mizuguchi
Publikováno v:
Chemical Physics Letters. 448:106-110
We demonstrate fabrication of rubrene-Co nano-composites, yielding an introduction of a spin degree of freedom in rubrene-based electronics devices, and report on large magnetoresistance (MR) ratio of 78% at 4.2 K. It is elucidated that the observed
Autor:
Akihiko Fujiwara, Takayuki Nagano, Toshio Ohta, K. Imai, Yoshihiro Kubozono, Haruka Kusai, Kenji Ochi
Publikováno v:
physica status solidi (b). 243:3021-3024
Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices w
Publikováno v:
Chemical Physics Letters. 413(4-6):379-383
Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences
Publikováno v:
IEEE Electron Device Letters. 34:1142-1144
We developed a stacked horizontal channel type floating gate (HC-FG) NAND memory; a 3-D stacked NAND array composed of conventional FG cells. With this cell structure, a wide program/erase (P/E) window is obtained, accompanied by superior read distur