Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Harufumi Kobayashi"'
Autor:
Harufumi Kobayashi
Publikováno v:
Journal of The Japan Institute of Electronics Packaging. 21:386-396
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0ae8d27d24ba51a953acdd2709d954
https://doi.org/10.5104/jiep.21.386
https://doi.org/10.5104/jiep.21.386
Autor:
Fumihiko Nakazawa, Kenichi Takeda, Tadashi Kamada, Harufumi Kobayashi, Haruo Shimamoto, Fumiaki Yamada, Kenichi Osada, Shiro Uchiyama, Morihiro Kada
Publikováno v:
Three-Dimensional Integration of Semiconductors ISBN: 9783319186740
Chapter 9 introduces the results of Japanese national research and development (R&D) initiative of 3D integration technology using through-silicon via (TSV) over the 5-year period from 2008 to 2012. Association of Super-Advanced Electronics Technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c98387ad1daad58c5623ecbb891072ec
https://doi.org/10.1007/978-3-319-18675-7_9
https://doi.org/10.1007/978-3-319-18675-7_9
Autor:
Harufumi Kobayashi
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 3:263-268
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224fdea02c4cbeb8a84a1a647b8882db
https://doi.org/10.5104/jiep.3.263
https://doi.org/10.5104/jiep.3.263
Autor:
H. Hashiguchi, Tetsu Tanaka, Mitsumasa Koyanagi, Harufumi Kobayashi, Takafumi Fukushima, Mariappan Murugesan
Publikováno v:
3DIC
High density 3D-LSI with W-TSV for signal line and Cu-TSV for power/GND line, and Cu-TSV containing W stress absorbing layers were investigated for the induced thermo-mechanical stress in 3D-LSI Si die/wafer after wafer thinning and bonding using mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32fcfdcdb099af2675a6a8dd7a1f5024
https://doi.org/10.1109/3dic.2012.6262970
https://doi.org/10.1109/3dic.2012.6262970
Autor:
Mitsumasa Koyanagi, Harufumi Kobayashi, Takafumi Fukushima, Tetsu Tanaka, Murugesan Mariappan
Publikováno v:
3DIC
Reliability issues such as thermo-mechanical stress, extrusion of via metal, and die-cracking caused by high density Cu-TSVs in 3D-LSI Si die/wafer after wafer thinning and bonding have been systematically investigated respectively using micro-Raman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1437f46045060884225dd32d12eedbba
https://doi.org/10.1109/3dic.2012.6262969
https://doi.org/10.1109/3dic.2012.6262969
Autor:
Tetsu Tanaka, Hideki Naganuma, Takafumi Fukushima, Koji Kiyoyama, Mitsumasa Koyanagi, K. W. Lee, Harufumi Kobayashi
Publikováno v:
3DIC
This paper presents a very small circuit area analog-to-digital converter (ADC) for three-dimensional (3-D) stacked CMOS image processing system. To realize high-speed image sensor, we have proposed a block-parallel signal processing with 3-D stacked
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244b6983517b2cb21a3e9a3b9101e784
https://doi.org/10.1109/3dic.2012.6262958
https://doi.org/10.1109/3dic.2012.6262958
Autor:
Tetsu Tanaka, Hideki Naganuma, Harufumi Kobayashi, Takafumi Fukushima, Mitsumasa Koyanagi, K-W Lee, K. Kiyoyama
Publikováno v:
3DIC
In this paper, we describe the fundamental study of the block-parallel analog signal processing elements which includes CMOS image sensor, correlated double sampling (CDS) array, and analog-to-digital converter (ADC) array. To realize high-speed imag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6010730f24d9a383adc601d4b956ff2
https://doi.org/10.1109/3dic.2010.5751479
https://doi.org/10.1109/3dic.2010.5751479
Publikováno v:
Solid State Technology. Jul2000, Vol. 43 Issue 7, p62. 4p. 3 Diagrams, 2 Graphs.
Autor:
Kada, Morihiro, Kobayashi, Harufumi, Yamada, Fumiaki, Shimamoto, Haruo, Uchiyama, Shiro, Takeda, Kenichi, Osada, Kenichi, Kamada, Tadashi, Nakazawa, Fumihiko
Publikováno v:
Three-Dimensional Integration of Semiconductors; 2015, p269-400, 132p
Publikováno v:
Three-Dimensional Integration of Semiconductors; 2015, pi-xix, 19p