Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Haruaki Sakurai"'
Autor:
Abe Koichi, Haruaki Sakurai
Publikováno v:
Kobunshi. 55:82-85
ULSIの高性能化のため,低誘電率層間絶縁膜材料(Low-k材料)が必要とされる.これまでLow-k材料は,ULSI製造プロセスに多くの課題があり,適用化が遅れていたが,最近,プロセス耐性のあるLow-k材料
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5430311ba5bea59bf4c38af91c17c4a9
https://doi.org/10.1295/kobunshi.55.82
https://doi.org/10.1295/kobunshi.55.82
Publikováno v:
Systems and Computers in Japan. 36:81-89
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b038a4dcda334d4cff5dbf7143ad65
https://doi.org/10.1002/scj.20217
https://doi.org/10.1002/scj.20217
Autor:
Takashi Shinoda, Tomohiro Iwano, Shigeru Nobe, Hisataka Minami, Haruaki Sakurai, Takahiro Hidaka, Takaaki Tanaka, Toshiaki Akutsu
Publikováno v:
Proceedings of International Conference on Planarization/CMP Technology 2014.
We report recent progress in a novel cerium hydroxide polishing slurry with particle size of about 5 nm nano size cerium hydroxide (NSC) abrasive. NSC has succeeded in omitting particles over 1 μm, and in reducing scratches to 1/30 of those with cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408bc1b55f8c1ddfd52235a1c07c38ab
https://doi.org/10.1109/icpt.2014.7017236
https://doi.org/10.1109/icpt.2014.7017236
Publikováno v:
Journal of Organometallic Chemistry. 499:235-240
The reaction of di-tert-butyldichlorosilane with lithium produced hepta-tert-butylcyclotetrasilane (1) and trans-1,1,2,3,3,4-hexa-tert-butylcyclotetrasilane (2). The structures of 1 and 2 were determined by X-ray crystallography. Crystal data for 1:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2eeccc78d5075aabdf628361929ba99
https://doi.org/10.1016/0022-328x(95)00317-j
https://doi.org/10.1016/0022-328x(95)00317-j
Publikováno v:
ChemInform. 33
In the reactions of decaisopropylbicyclo[2.2.0]hexasilane (1) with hydrobromic acid and hydrochloric acid, the bridgehead Si–Si bond of 1 was selectively cleaved to give 1-halo-1,2,2,3,3,4,5,5,6,6-decaisopropylcyclohexasilanes. The X-ray crystallog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c1f2baa434cda6d42d3d904741c496
https://doi.org/10.1002/chin.200219153
https://doi.org/10.1002/chin.200219153
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
A novel non-reflowable low-k spin-on glass (NR-SOG, k = 2.4) has been developed for the gap-filling technology in sub-50-nm memory devices. The new SOG has planarizing and gap-filling capabilities as high as conventional reflowable SOGs have, while i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528ce30a4f4174eb9e39368f3f54fe91
https://doi.org/10.1109/vlsit.2006.1705241
https://doi.org/10.1109/vlsit.2006.1705241
Publikováno v:
Organometallics. 16:5386-5388
Silyl radicals (EtnMe3-nSi)3Si• (1, n = 1; 2, n = 2; 3, n = 3) were generated by hydrogen abstraction from (EtnMe3-nSi)3SiH (4, n = 1; 5, n = 2; 6, n = 3) with di-tert-butyl peroxide and by photolysis of (EtnMe3-nSi)4Si (7, n = 1; 8, n = 2; 9, n =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::364a8022032eca72b67646d13f15057d
https://doi.org/10.1021/om970607x
https://doi.org/10.1021/om970607x
Autor:
Toranosuke Ashizawa, Naoyuki Koyama, Yoichi Machii, Haruaki Sakurai, Yosuke Hoshi, Daisuke Ryuzaki
Publikováno v:
Japanese Journal of Applied Physics. 51:036502
New chemical mechanical polishing processes using nanocolloidal ceria slurry are proposed for high-precision and low-damage planarization of silicon-dioxide-based dielectric films. In the polishing process of a shallow trench isolation structure, a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b70dcdcce367d85858a1afecf29d4bf
https://doi.org/10.7567/jjap.51.036502
https://doi.org/10.7567/jjap.51.036502
Publikováno v:
Japanese Journal of Applied Physics. 51:031501
A new low-dielectric-constant spin-on glass (SOG) with a k value of 2.4 has been developed for a gap-filling process in advanced memory devices. The low-shrinkage characteristic of the SOG during thermal curing provides capabilities of gap filling an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05b2a60441c2b2232895599c4b8bbdda
https://doi.org/10.1143/jjap.51.031501
https://doi.org/10.1143/jjap.51.031501
Publikováno v:
Chemistry Letters. 30:1212-1213
In the reactions of decaisopropylbicyclo[2.2.0]hexasilane (1) with hydrobromic acid and hydrochloric acid, the bridgehead Si–Si bond of 1 was selectively cleaved to give 1-halo-1,2,2,3,3,4,5,5,6,6-decaisopropylcyclohexasilanes. The X-ray crystallog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a437d1ba7a5bed3c031d22b7e4317bf0
https://doi.org/10.1246/cl.2001.1212
https://doi.org/10.1246/cl.2001.1212