Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hartmut Prinz"'
Autor:
Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann
Publikováno v:
ECS Transactions. 33:3-14
Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f183ab8e314b3efbdf19c02cd2021381
https://doi.org/10.1149/1.3481586
https://doi.org/10.1149/1.3481586
Autor:
Hans-Henning Strehblow, Hartmut Prinz
Publikováno v:
Electrochimica Acta. 47:3093-3104
Small two-dimensional clusters and linear nanostructures of copper and cadmium were prepared electrochemically on the stepped surface of a (533) Pt single crystal. The deposition was performed under potentiostatic conditions in a solution of 0.001 M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452a9a014cbfba14942b646f38c64f2e
https://doi.org/10.1016/s0013-4686(02)00228-1
https://doi.org/10.1016/s0013-4686(02)00228-1
Autor:
Rainer Giedigkeit, Stephan Waidmann, Inka Richter, Hartmut Prinz, Van Le, Kornelia Dittmar, David M. Owen, Jeff Hebb, Shrinivas Shetty, Yun Wang, Robert Binder, M. Weisheit
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Advanced millisecond annealing technologies are being implemented to enable scaling of silicidation of Ni for contacts. There are several aspects of the millisecond annealing process that must be optimized in order to minimize defects and improve yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec461c87d32a3339eb17bbf436eff09a
https://doi.org/10.1109/rtp.2010.5623798
https://doi.org/10.1109/rtp.2010.5623798
Autor:
Van Le, Shrinivas Shetty, Kornelia Dittmar, Jeff Hebb, Rainer Giedigkeit, Inka Richter, M. Weisheit, Stephan Waidmann, Jeffrey Mileham, Yun Wang, Hartmut Prinz, Robert Binder, Dave Owen
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6a5ec4c0b2af9271e3835118c49f22
https://doi.org/10.1109/rtp.2010.5623800
https://doi.org/10.1109/rtp.2010.5623800
Publikováno v:
AIP Conference Proceedings.
We report the design and performance of a unique parabolic focusing optics for a general purpose materials research station at the bending magnet BM20 (ROBL‐CRG) at ESRF. The measured gain between 8–12 keV was >1000, the focal spot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8d089c8be2794c7da95ce1a36107ca
https://doi.org/10.1063/1.2436225
https://doi.org/10.1063/1.2436225
Publikováno v:
Materials for Information Technology ISBN: 1852339411
In addition to standard reliability tests, both a careful process control based on a large number of data to reach statistically relevant conclusions and the study of solid-state physical degradation mechanisms at representative samples are needed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c93e568c8a51a5fdd6008f0872a7577
https://doi.org/10.1007/1-84628-235-7_21
https://doi.org/10.1007/1-84628-235-7_21
Publikováno v:
AIP Conference Proceedings.
Electromigration‐induced degradation processes in via/line dual inlaid copper interconnect test structures are discussed based on experimental studies. Void formation, growth and movement, and consequently interconnect degradation, depend on both i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b7078995a73faaac81910a4c2fd3ef
https://doi.org/10.1063/1.1845850
https://doi.org/10.1063/1.1845850
Publikováno v:
AIP Conference Proceedings.
The influence of ILD, liner and etch stop layer on the room temperature stress state of copper line test structures was examined by micro‐XRD. Test structures consisted of large arrays of parallel lines with line widths of 0.18 μm and 1.8 μm. All
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca0875eeeb0718e51bb5b9ad4f34acac
https://doi.org/10.1063/1.1845852
https://doi.org/10.1063/1.1845852
Publikováno v:
AIP Conference Proceedings.
For future technology nodes with shrunken interconnect dimensions, a thorough texture analysis of the metal interconnects becomes increasingly important in order to optimize and to control the inlaid‐copper process. In comparison to plane metal lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2d64f86ab4d52cafdf5094082894c2f
https://doi.org/10.1063/1.1622513
https://doi.org/10.1063/1.1622513
Autor:
Torben Kelwing, Andreas Naumann, Martin Trentzsch, Sergej Mutas, Bernhard Trui, Lutz Herrmann, Falk Graetsch, Christoph Klein, Lutz Wilde, Susanne Ohsiek, Martin Weisheit, Anita Peeva, Inka Richter, Hartmut Prinz, Alexander Wuerfel, Rick Carter, Rolf Stephan, Peter Kücher, Walter Hansch
Publikováno v:
ECS Meeting Abstracts. :1484-1484
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35f8de1f6cf690b1dbdaa59ca2037d3
https://doi.org/10.1149/ma2010-02/22/1484
https://doi.org/10.1149/ma2010-02/22/1484