Zobrazeno 1 - 10
of 3 868
pro vyhledávání: '"Hartmann J. M"'
Autor:
Bédécarrats, T., Paz, B. Cardoso, Diaz, B. Martinez, Niebojewski, H., Bertrand1, B., Rambal, N., Comboroure, C., Sarrazin, A., Boulard, F., Guyez, E., Hartmann, J. -M., Morand, Y., Magalhaes-Lucas, A., Nowak, E., Catapano, E., Cassé, M., Urdampilleta, M., Niquet, Y. -M., Gaillard, F., De Franceschi, S., Meunier, T., Vinet, M.
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange intera
Externí odkaz:
http://arxiv.org/abs/2304.03721
Autor:
Spindlberger, L., Aberl, J., Vukušić, L., Fromherz, T., Hartmann, J.-M., Fournel, F., Prucnal, S., Murphy-Armando, F., Brehm, M.
Publikováno v:
In Materials Science in Semiconductor Processing October 2024 181
Autor:
Demoulin, R., Daubriac, R., Kerdilès, S., Dagault, L., Adami, O., Ricciarelli, D., Hartmann, J.-M., Chiodi, F., Mio, A.M., Opprecht, M., Scheid, E., Alba, P.Acosta, Débarre, D., Magna, A.La, Cristiano, F.
Publikováno v:
In Applied Surface Science 1 March 2025 684
Autor:
Reboud, V., Buca, D., Sigg, H., Hartmann, J. M., Ikonic, Z., Pauc, N., Calvo, V., Rodriguez, P., Chelnokov, A.
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical si
Externí odkaz:
http://arxiv.org/abs/2012.10220
Autor:
Hartmann, J. -M., Ma, J., Delahaye, T., Billard, F., Hertz, E., Wu, J., Lavorel, B., Boulet, C., Faucher, O.
Publikováno v:
Phys. Rev. Research 2, 023247 (2020)
We show that the decays with pressure of the alignment echoes induced in N2O-He gas mixtures by two laser pulses with various delays bring detailed information on collision-induced changes of the rotational speed. Measurements and calculations demons
Externí odkaz:
http://arxiv.org/abs/2002.01212
Autor:
Elbaz, A., Buca, D., Driesch, N. Von den, Pantzas, K., Patriarche, G., Zerounian, N., Herth, E., Checoury, X., Sauvage, S., Sagnes, I., Foti, A., Ossikovski, R., Hartmann, J. -M., Boeuf, F., Ikonic, Z., Boucaud, P., Grutzmacher, D., Kurdi, M. El
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed f
Externí odkaz:
http://arxiv.org/abs/2001.04927
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., Meunier, T.
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Externí odkaz:
http://arxiv.org/abs/1912.09807
Autor:
Frauenrath, M., Acosta Alba, P., Concepción, O., Bae, J.-H., Gauthier, N., Nolot, E., Veillerot, M., Bernier, N., Buca, D., Hartmann, J.-M.
Publikováno v:
In Materials Science in Semiconductor Processing 15 August 2023 163