Zobrazeno 1 - 10
of 598
pro vyhledávání: '"Hartmann, Jean Michel"'
Autor:
Leblanc, Axel, Tangchingchai, Chotivut, Momtaz, Zahra Sadre, Kiyooka, Elyjah, Hartmann, Jean-Michel, Gustavo, Frederic, Thomassin, Jean-Luc, Brun, Boris, Schmitt, Vivien, Zihlmann, Simon, Maurand, Romain, Dumur, Etienne, De Franceschi, Silvano, Lefloch, Francois
Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple har
Externí odkaz:
http://arxiv.org/abs/2405.14695
Autor:
Durand, Alrik, Baron, Yoann, Udvarhelyi, Péter, Cache, Félix, R., Krithika V., Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gali, Adam, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the s
Externí odkaz:
http://arxiv.org/abs/2404.15069
Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Autor:
Ricciarelli, Damiano, Müller, Jonas, Larrieu, Guilhem, Deretzis, Ioannis, Calogero, Gaetano, Martello, Enrico, Fisicaro, Giuseppe, Hartmann, Jean-Michel, Kerdilès, Sébastien, Opprecht, Mathieu, Mio, Antonio Massimiliano, Daubriac, Richard, Cristiano, Fuccio, La Magna, Antonino
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (N
Externí odkaz:
http://arxiv.org/abs/2403.11606
Autor:
Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Physical Review B 110, 2 (2024)
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However
Externí odkaz:
http://arxiv.org/abs/2402.07705
Autor:
Calogero, Gaetano, Raciti, Domenica, Ricciarelli, Damiano, Acosta-Alba, Pablo, Cristiano, Fuccio, Daubriac, Richard, Demoulin, Remi, Deretzis, Ioannis, Fisicaro, Giuseppe, Hartmann, Jean-Michel, Kerdilès, Sébastien, La Magna, Antonino
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires car
Externí odkaz:
http://arxiv.org/abs/2309.02909
Laser-induced alignment of nanoparticles and macromolecules for single-particle-imaging applications
Laser-induced alignment of particles and molecules was long envisioned to support three-dimensional structure determination using single-particle imaging with x-ray free-electron lasers [PRL 92, 198102 (2004)]. However, geometric alignment of isolate
Externí odkaz:
http://arxiv.org/abs/2306.05870
Autor:
Ricciarelli, Damiano, Mannino, Giovanni, Deretzis, Ioannis, Calogero, Gaetano, Fisicaro, Giuseppe, Daubriac, Richard, Demoulin, Remi, Cristiano, Fuccio, Michalowski, Pawel P., Acosta-Alba, Pablo, Hartmann, Jean-Michel, Kerdilès, Sébastien, La Magna, Antonino
Publikováno v:
Mat. Sci. Semicond. Proc. 165 (2023) 10765
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes.
Externí odkaz:
http://arxiv.org/abs/2303.15977
We use radiances collected from space by the Infrared Atmospheric Sounder Interferometer (IASI) when looking down at ocean surfaces during the day to remotely determine the probability distribution of wave slopes. This is achieved by using about 300
Externí odkaz:
http://arxiv.org/abs/2210.05456
Autor:
Baron, Yoann, Durand, Alrik, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Reboh, Shay, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Applied Physics Letters 121, 084003 (2022)
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions
Externí odkaz:
http://arxiv.org/abs/2204.13521