Optical Transitions in Direct-Bandgap Ge1-xSnx Alloys

Autor: Stange, D, Wirths, S, Von Den Driesch, N, Mussler, G, Stoica, T, Ikonic, Z, Hartmann, JM, Mantl, S, Grützmacher, D, Buca, D

Publikováno v: ACS Photonics

A comprehensive study of optical transitions in direct-bandgap Ge0.875Sn0.125 group IV alloys via photoluminescence measurements as a function of temperature, compressive strain and excitation power is performed. The analysis of the integrated emissi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::18de1dc2141c03ca80169168294994bd
https://eprints.whiterose.ac.uk/92515/1/ACS-GeSn_PL.pdf

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack

Autor: Barral, V., Poiroux, T., Andrieu, F., Buj-Dufournet, C., Faynot, O., Ernst, T., Brevard, L., Fenouillet-Beranger, C., Lafond, D., Hartmann, Jm, Vidal, V., Allain, F., Daval, N., Cayrefourcq, I., Tosti, L., Daniela Munteanu, Autran, Jl, Deleonibus, S.

Publikováno v: 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, Unknown, Unknown Region. pp.61+, ⟨10.1109/IEDM.2007.4418863⟩
ResearcherID

IEEE International Electron Devices Meeting, Washington, DC, DEC 10-12, 2007; International audience; Scalability of both unstrained and strained FDSOI CMOSFETs is explored for the first time down to 2.5nm film thickness and 18nm gate length with HfO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c88f8e65e9a34387d11dd220aafd814a
https://hal.archives-ouvertes.fr/hal-01759439

Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology.

Autor: Letertre, F., Deguet, C., Richtarch, C., Faure, B., Hartmann, JM, Chieu, F., Beaumont, A., Dechamp, J., Morales, C., Allibert, F., Perreau, P., Pocas, S., Personmc, S., Lagahe-Blanchard, C., Ghyselen, B., Le Vaillant, Y.M., Jalaguier, Kernevez, N., Mazure, C.

Publikováno v: MRS Online Proceedings Library; 204, Vol. 809 Issue 1, p1-6, 6p

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