Zobrazeno 1 - 10
of 10 296
pro vyhledávání: '"Hart, James"'
Autor:
Massicotte, Mathieu, Dehlavi, Sam, Liu, Xiaoyu, Hart, James L., Garnaoui, Elio, Lampen-Kelley, Paula, Yan, Jiaqiang, Mandrus, David, Nagler, Stephen E., Watanabe, Kenji, Taniguchi, Takashi, Reulet, Bertrand, Cha, Judy J., Kee, Hae-Young, Quilliam, Jeffrey A.
The spin-orbit assisted Mott insulator $\alpha$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has
Externí odkaz:
http://arxiv.org/abs/2407.19685
Autor:
Hollenbach, Jonathan D, Pate, Cassandra M, Jia, Haili, Hart, James L, Clancy, Paulette, Taheri, Mitra L
In-situ Electron Energy Loss Spectroscopy (EELS) is an instrumental technique that has traditionally been used to understand how the choice of materials processing has the ability to change local structure and composition. However, more recent advanc
Externí odkaz:
http://arxiv.org/abs/2312.05201
Autor:
Jin, Gangtae, Multunas, Christian D., Hart, James L., Kiani, Mehrdad T., Sam, Quynh P., Wang, Han, Cheon, Yeryun, Duong, Khoan, Hynek, David J., Han, Hyeuk Jin, Sundararaman, Ravishankar, Cha, Judy J.
Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding c
Externí odkaz:
http://arxiv.org/abs/2309.11314
Autor:
Hart, James L, Siddique, Saif, Schnitzer, Noah, Funni, Stephen D., Kourkoutis, Lena F., Cha, Judy J.
The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS$_2$
Externí odkaz:
http://arxiv.org/abs/2309.06406
Autor:
Hart, James L, Bhatt, Lopa, Zhu, Yanbing, Han, Myung-Geun, Bianco, Elisabeth, Li, Shunran, Hynek, David J, Schneeloch, John A, Tao, Yu, Louca, Despina, Guo, Peijun, Zhu, Yimei, Jornada, Felipe, Reed, Evan J, Kourkoutis, Lena F, Cha, Judy J
The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher
Externí odkaz:
http://arxiv.org/abs/2210.16390