Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Harshada Patil"'
Autor:
Muhammad Asghar Khan, Sungbin Yim, Shania Rehman, Faisal Ghafoor, Honggyun Kim, Harshada Patil, Muhammad Farooq Khan, Jonghwa Eom
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100438- (2023)
Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for addressing a wide range of artificial intelligence tasks. For example, neuromorphic computing seeks
Externí odkaz:
https://doaj.org/article/be21fdb3bf47419caa399d19ab448840
Autor:
Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok‐kee Kim, Muhammad Farooq Khan
Publikováno v:
Advanced Science, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (Ga
Externí odkaz:
https://doaj.org/article/c90e3b81707845f38e9e0e7adf91ad2e
Autor:
Muhammad Asghar Khan, Muhammad Farooq Khan, Shania Rehman, Harshada Patil, Ghulam Dastgeer, Byung Min Ko, Jonghwa Eom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe2, wh
Externí odkaz:
https://doaj.org/article/7d089b6a1e53478186c7fd464c02aaf4
Autor:
Supriya A. Patil, Pranav K. Katkar, Mosab Kaseem, Ghazanfar Nazir, Sang-Wha Lee, Harshada Patil, Honggyun Kim, Verjesh Kumar Magotra, Hoa Bui Thi, Hyunsik Im, Nabeen K. Shrestha
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1587 (2023)
A metal–organic framework (MOF) is a highly porous material with abundant redox capacitive sites for intercalation/de-intercalation of charges and, hence, is considered promising for electrode materials in supercapacitors. In addition, dopants can
Externí odkaz:
https://doaj.org/article/f7cf8e586efd4dcbb43cdfa75519194d
Autor:
Jamal Aziz, Honggyun Kim, Shania Rehman, Muhammad Farooq Khan, Kalyani D. Kadam, Harshada Patil, Sikandar Aftab, Ghulam Dastgeer, Deok‐kee Kim
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐lay
Externí odkaz:
https://doaj.org/article/ddfc6582ae2e4f2085cecb5784476210
Autor:
Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Materials Research Express, Vol 10, Iss 1, p 016401 (2023)
Due to its high dielectric constant ( κ ), the BaTiO _3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film e
Externí odkaz:
https://doaj.org/article/54e6b07317d74be7ba8b66811ac6db40
Autor:
Manasi Mahadik, Harshada Patil, Gajanan Bodkhe, Nikesh Ingle, Pasha Sayyad, Theeazen Al-Gahaouri, Sumedh M. Shirsat, Mahendra Shirsat
Publikováno v:
Frontiers in Materials, Vol 7 (2020)
Electrochemical recognition of Hg (II) ions utilizing EDTA modified polyaniline (PANI)/Graphene Oxide (GO) composite is reported in the present communication. Graphene Oxide (GO) synthesis was carried out by a modified Hummer’s method. Electrochemi
Externí odkaz:
https://doaj.org/article/72178cd7dd594450911bbb1b3ecf13da
Autor:
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 359 (2021)
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO de
Externí odkaz:
https://doaj.org/article/5ef6692035124ff7a592ac3bf416b872
Autor:
Shania Rehman, Muhammad Farooq Khan, Mehr Khalid Rahmani, Honggyun Kim, Harshada Patil, Sobia Ali Khan, Moon Hee Kang, Deok-kee Kim
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2326 (2020)
The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the profi
Externí odkaz:
https://doaj.org/article/fba23d08da1c4f3484b3512ff5cd7ca8
Autor:
Anuj Kumar Gupta, Parvinder Kaur, Harshada Patil, Pallavi Kadam, Paresh B. Bhanushali, Manoj Chugh
Publikováno v:
Biochemistry Research International, Vol 2015 (2015)
Aberrant glycosylation is one of the major hallmarks of cancer with altered gene expression signatures of sialyltransferases. ST3Gal-I, a sialyltransferase, is known to play a crucial role in sialylation of T antigen in bladder cancer and it has repo
Externí odkaz:
https://doaj.org/article/dd76b658faae4ae99a8f449560aef36f