Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Harry Kawayoshi"'
Publikováno v:
Journal of Applied Physics. 71:3225-3230
The quality of epitaxial silicon grown on regions exposed to plasma etching using He, CHF3, and CF4 etching gases has been studied. Plasma‐etch‐induced surface damage leads to defects in the epilayers. Dislocation loops and precipitates at the ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24ea95bbb393806968402f618e3ef2d
https://doi.org/10.1063/1.350968
https://doi.org/10.1063/1.350968
Publikováno v:
Journal of Applied Physics. 70:685-692
The low‐temperature epitaxial growth of Si under conditions in which no nucleation occurs on SiO2 (selective growth) results in interesting new surface morphology. For substrates free of nonvolatile surface contaminants, specular defect‐free film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f34a367867b9a2f3509a74574cb44b
https://doi.org/10.1063/1.349648
https://doi.org/10.1063/1.349648
Publikováno v:
Applied Physics Letters. 60:1232-1234
Low‐temperature epitaxial growth of Si using a dichlorosilane‐hydrogen mixture in a hot‐wall reactor has been studied with respect to in situ predeposition oxide removal. With BF2+ or F+ ion implantation prior to the final substrate cleaning st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8a4c80c797651908ffa7993f7be67f
https://doi.org/10.1063/1.107415
https://doi.org/10.1063/1.107415
Publikováno v:
MRS Proceedings. 220
Low-temperature selective epitaxial growth (SEG) of silicon using a dichlorosilane-hydrogen mixture in an LPCVD hot-wall reactor has been discussed with respect to the wafer preparation and the deposition cycle. The surface morphology and the quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2705662e21c377c1b8eb3531678e0b8
https://doi.org/10.1557/proc-220-353
https://doi.org/10.1557/proc-220-353
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