Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Harry Hier"'
Publikováno v:
MRS Advances. 4:897-903
Recent progress in semiconductor materials with minor nonradiative recombination has stimulated investigations of novel photovoltaic (PV) converters with optical control of radiative emission. Angle restricted emission was experimentally demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592c258a8af2c8c4ba6487254ecf1324
https://doi.org/10.1557/adv.2018.658
https://doi.org/10.1557/adv.2018.658
Autor:
D. Donetsky, Gregory Belenky, Wendy L. Sarney, Youxi Lin, D. Wang, Harry Hier, Stefan P. Svensson
Publikováno v:
Journal of Electronic Materials. 43:3184-3190
Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc96a9d9b9eda1889c04ce39de6f1d49
https://doi.org/10.1007/s11664-014-3239-6
https://doi.org/10.1007/s11664-014-3239-6
Autor:
Stefan P. Svensson, Wendy L. Sarney, D. Wang, Dmitry Donetsky, Youxi Lin, Harry Hier, Gregory Belenky, Gela Kipshidze, Leon Shterengas
Publikováno v:
Journal of Electronic Materials. 42:918-926
The energy gaps were studied in two types of structures: unrelaxed bulk InAs1−x Sb x layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1−x Sb x /InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b629d6902b6340563c79ba5602f195da
https://doi.org/10.1007/s11664-013-2528-9
https://doi.org/10.1007/s11664-013-2528-9
Autor:
Dmitry Donetsky, Gela Kipshidze, Gregory Belenky, Wendy L. Sarney, Youxi Lin, Stefan P. Svensson, Harry Hier, D. Wang, Leon Shterengas
Publikováno v:
SPIE Proceedings.
Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 µm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3acabcea201b8e6e8cb92a7c9083f653
https://doi.org/10.1117/12.2016082
https://doi.org/10.1117/12.2016082
Autor:
Gela Kipshidze, Stefan P. Svensson, Harry Hier, Gregory Belenky, D. Wang, Dmitry Donetsky, Youxi Lin, Leon Shterengas, Wendy L. Sarney
Publikováno v:
Physical Review B. 86
The band gap energy of the alloy InAsSb has been studied as a function of composition with special emphasis on minimization of strain-induced artifacts. The films were grown by molecular beam epitaxy on GaSb substrates with compositionally graded buf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4abab175f48a6020ff1efefe0a1307da
https://doi.org/10.1103/physrevb.86.245205
https://doi.org/10.1103/physrevb.86.245205
Autor:
Wendy L. Sarney, Gela Kipshidze, Leon Shterengas, Youxi Lin, Harry Hier, D. Wang, Gregory Belenky, Stefan P. Svensson, Dmitry Donetsky
Publikováno v:
SPIE Proceedings.
The optical properties of bulk unrelaxed InAsSb layers having a low temperature photoluminescence (PL) peak up to 10 μm are presented. The materials were grown on GaSb substrates by molecular beam epitaxy. The lattice mismatch between the epilayers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3809b99eb9ce3f42d954009b9ef95ad1
https://doi.org/10.1117/12.919451
https://doi.org/10.1117/12.919451
Autor:
Youxi Lin, Gregory Belenky, D. Donetsky, Harry Hier, Leon Shterengas, D. Wang, Stefan P. Svensson, Wendy L. Sarney, Gela Kipshidze
Publikováno v:
SPIE Proceedings.
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs0.12Sb0.88 laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7cba3828c0b4aa94f2df298eeda29bd
https://doi.org/10.1117/12.883625
https://doi.org/10.1117/12.883625
Autor:
Jim Foshee, Parminder Ghuman, Sachi Babu, Harry Hier, Mark Lecates, Leye Aina, Ayub Fathimulla
Publikováno v:
Advanced Photon Counting Techniques III.
This paper reports the demonstration of single photon counting receivers with pulse detection efficiency as high as 68% for 2 photons and single photon counting probabilities as high as 44% at 1550-nm, 1 MHz rate and room temperature and with linear-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bbce3d58507c735eb137442fc47a6e
https://doi.org/10.1117/12.818820
https://doi.org/10.1117/12.818820
Publikováno v:
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference.
We report the development of ultrasensitive photoreceivers, based on ultra high gain and low excess noise APDs, with sensitivities of −35.5 dBm at 2.488 Gbps and 10−10 BER and the potential for 6–12 dB sensitivity enhancement at higher bit rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e72a18ef32f52322f6ee1e29dab515
https://doi.org/10.1364/nfoec.2009.jtha27
https://doi.org/10.1364/nfoec.2009.jtha27
Publikováno v:
SPIE Proceedings.
We report high gain, high sensitivity 1064-1550 nm avalanche photodiodes (APDs) that are capable of single photon counting in the linear mode below the breakdown voltage and at room temperature. Epitaxial Technologies has developed AIInAs/GaInAs APDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ebc06dfccba9b00f0aa67800563aa0
https://doi.org/10.1117/12.753762
https://doi.org/10.1117/12.753762