Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Autor: Dawei Liu, Jianjing Wang, Harry C. P. Dymond, Bernard H. Stark, Mohammad H. Hedayati

Publikováno v: Hedayati, M H, Wang, J, Dymond, H C P, Liu, D & Stark, B H 2020, ' Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor ', IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7417-7428 . https://doi.org/10.1109/TPEL.2020.3041594

Power semiconductor devices have maximum junction temperature limits, but it is not straightforward to sense or infer temperature inside sealed devices in running converters. One method is to observe electrical behavior that is known to be temperatur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7b29e70f50f60db4b0281e1247fb92c
https://doi.org/10.1109/tpel.2020.3041594

Full custom design of an arbitrary waveform gate driver with 10 GHz waypoint rates for GaN FETs

Autor: Harry C. P. Dymond, Simon J. Hollis, Neville McNeill, Dinesh Pamunuwa, Bernard H. Stark, Jianjing Wang, Dawei Liu

Publikováno v: Liu, D, Dymond, H C P, Hollis, S J, Wang, J, Mcneill, J N, Stark, B H & Pamunuwa, I D B 2020, ' Full custom design of an arbitrary waveform gate driver with 10 GHz waypoint rates for GaN FETs ', IEEE Transactions on Power Electronics, pp. 8267-8279 . https://doi.org/10.1109/TPEL.2020.3044874

Active gate driving of power devices seeks to shape switching trajectories via the gate, for example, to reduce EMI without degrading efficiency. To this end, driver ICs with integrated arbitrary waveform generators have been used to achieve complex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aeeafa7ac470d9b66fef88b55fcb04c1
https://strathprints.strath.ac.uk/75186/1/Liu_etal_TPE_Full_custom_design_of_an_arbitrary_waveform_gate_driver.pdf

A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI

Autor: Neville McNeill, Dinesh Pamunuwa, Bernard H. Stark, Harry C. P. Dymond, Jeremy J. O. Dalton, Simon J. Hollis, Jianjing Wang, Dawei Liu

Publikováno v: Dymond, H C P, Wang, J, Liu, D, Dalton, J J O, McNeill, N, Pamunuwa, D, Hollis, S J & Stark, B H 2018, ' A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI ', IEEE Transactions on Power Electronics, vol. 33, no. 1, 7880639, pp. 581-594 . https://doi.org/10.1109/TPEL.2017.2669879

Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06badd1ae46cb0dcc2e677f6f5e0abe7
https://doi.org/10.1109/tpel.2017.2669879

Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters

Autor: Harry C. P. Dymond, Bernard H. Stark, Jeremy J. O. Dalton

Publikováno v: Dymond, H, Dalton, J & Stark, B H 2018, Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters . in 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018) . Institute of Electrical and Electronics Engineers (IEEE), pp. 5357-5364 . https://doi.org/10.1109/ECCE.2018.8558406

Both turn-on and turn-off gate resistance for switched power devices can significantly impact system EMI, switching loss, and device longevity. To determine the optimum resistor values, an exhaustive search through $\boldsymbol{m}$ different turn-on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cdcc339bf82e333540a3436062a42b1
https://hdl.handle.net/1983/6d847174-041b-4dea-81a4-d75f902f4204

Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current

Autor: Jeremy J. O. Dalton, Dawei Liu, David Drury, Harry C. P. Dymond, Jianjing Wang, Mohammad H. Hedayati, Bernard H. Stark

Publikováno v: Dalton, J, Dymond, H C P, Wang, J, Hedayati, M, Liu, D, Drury, D & Stark, B H 2019, Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current . in 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018) : Proceedings of a meeting held 23-27 September 2018, Portland, Oregon, USA ., 8557531, 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018, Institute of Electrical and Electronics Engineers (IEEE), pp. 3497-3502 . https://doi.org/10.1109/ECCE.2018.8557531

Active gate driving, where the gate signal is actively profiled, has been shown to reduce EMI, overshoot, and switching loss, in silicon power converters. Recently, much faster gate drivers with the ability to profile at a 100 ps resolution have been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::146960538c85991e3f8a79a6e0ccc490
https://doi.org/10.1109/ecce.2018.8557531