Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Harry Botermans"'
Publikováno v:
Microelectronic Engineering. 35:517-522
One of the critical applications of DUV (248nm) lithography for 0.25 μm technology is the imaging of contact and via holes. The goal of this work was to demonstrate and verify manufacturing process capability for imaging 0.25 μm design rule (300 nm
Autor:
Kurt G. Ronse, Harry Botermans, Kouros Ghandehari, Peter De Bisschop, Luc Van den Hove, Maaike Op de Beeck, John A. Lilygren, Jo Finders, Daniel Claire Baker, Mireille Maenhoudt, Patrick Jaenen, Geert Vandenberghe
Publikováno v:
SPIE Proceedings.
In this paper, the results of an NA-sigma optimisation study are reported, carried out experimentally for an advanced ASML PAS5500/300 deep-UV stepper. The work has been primarily focused on a 0.25 and sub-0.25 mu m gate layer in a logic CMOS process
Autor:
Anthony Yen, Rik Jonckheere, Maaike Op de Beeck, Bert Bruggeman, Alexander Tritchkov, Veerle Van Driessche, Kurt G. Ronse, Harry Botermans, Luc Van den Hove
Publikováno v:
SPIE Proceedings.
Optical proximity effects (OPE) are narrowing the process window in the 0.25micrometers - 0.18micrometers CD range. Hence optical proximity correction (OPC) might be required. These proximity effects and correction strategies are studied in detail in
Conference
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