Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Harold. P. Hjalmarson"'
Autor:
Peter A. Schultz, Arthur H. Edwards, Renee M. Van Ginhoven, Harold P. Hjalmarson, Andrew M. Mounce
Publikováno v:
Physical Review B. 107
Autor:
Jack D. Flicker, Luciano Andres Garcia Rodriguez, Jacob Mueller, Lee Gill, Jason C. Neely, Emily Schrock, Harold P. Hjalmarson, Enrico Bellotti, Peter A. Schultz, Jane M. Lehr, Gregory Pickrell, Robert Kaplar
Publikováno v:
Power Systems ISBN: 9783031265716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13a049ae3b514fe7da4c11f7229161a9
https://doi.org/10.1007/978-3-031-26572-3_9
https://doi.org/10.1007/978-3-031-26572-3_9
Autor:
Peter A. Schultz, Harold P. Hjalmarson
Publikováno v:
Physical Review B. 105
Autor:
Harold. P. Hjalmarson, Steven C. Witczak, Samuel Z. Roark, Renee Van Ginhoven, Thomas Buchheit, Hugh Barnaby, Philippe Adell
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
Taisuke Ohta, Ezra Bussmann, Peter A. Schultz, Morgann Berg, Harold P. Hjalmarson, Chris H. Moore, David Scrymgeour
Publikováno v:
Physical Review B. 103
The stability of low-index platinum surfaces and their electronic properties is investigated with density functional theory, toward the goal of understanding the surface structure and electron emission, and identifying precursors to electrical breakd
Autor:
Morgann Berg, Sean W. Smith, David A. Scrymgeour, Michael T. Brumbach, Ping Lu, Sara M. Dickens, Joseph R. Michael, Taisuke Ohta, Ezra Bussmann, Harold P. Hjalmarson, Peter A. Schultz, Paul G. Clem, Matthew M. Hopkins, Christopher H. Moore
Structural disorder causes materials’ surface electronic properties, e.g., work function ([Formula: see text]), to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g., roughness or granula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb8d6fcb9578d0fb847d9c7fb69bd99e
Autor:
Matthew J. Marinella, Brian D. Tierney, Harold P. Hjalmarson, Robin B. Jacobs-Gedrim, Conrad D. James, Sapan Agarwal
Publikováno v:
Applied Physics A. 124
A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transp
Autor:
Harold P. Hjalmarson, Jason D. Serrano, Matthew J. Marinella, Don Hanson, Roy P. Cuoco, J. Kyle McDonald, David Russell Hughart, Michael Lee McLain, E. Fredrick Hartman
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaO x ) memristive bit cells are investigated. The TaO x devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function
Autor:
Tim J. Sheridan, Don Hanson, Kyle McDonald, Patrick R. Mickel, Matthew J. Marinella, David Russell Hughart, Harold P. Hjalmarson, Michael Lee McLain
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2997-3004
This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaOx) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 ×107 r
(Invited) Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator
Autor:
James B. Aimone, Seth Decker, Conrad D. James, Fredrick Rothganger, Roger Apodaca, Robert J. Bondi, James E. Stevens, Andrew J. Lohn, Patrick R. Mickel, Brian Robert Evans, Erik P. DeBenedictis, David Russell Hughart, Harold P. Hjalmarson, Matthew Marinella, Denis Mamaluy
Publikováno v:
ECS Transactions. 64:37-42
Resistive random access memory (ReRAM), or memristors, may be capable of significantly improving the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variati