Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Harold Persing"'
Autor:
Harold Persing, Siamak Salimian, Wang Cuiyang, Qi Gao, Shan Tang, Miller Timothy J, Jonathan Gerald England, Hans Gossmann
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
In this paper the primary mechanisms for the plasma doping (PLAD) of 3D structures – direct implant, scattered implant, deposition & knock-in, and sputtering (etching) – are discussed. The TRI3DYN code was used to elucidate the roles these variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2068141d2427147b53fb6b5a3d8bdf78
https://doi.org/10.23919/iwjt.2017.7966515
https://doi.org/10.23919/iwjt.2017.7966515
Publikováno v:
Physics of Plasmas. 9:3171-3177
As the input rf power to a helicon plasma is increased there is a discontinuous increase in the density which is identified with a change from a capacitive to an inductive/wave coupling to the plasma. The radial distribution of the density is much na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58f4b42783954fa403f7b56233ebd079
https://doi.org/10.1063/1.1483845
https://doi.org/10.1063/1.1483845
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcf289c215f16c3eff6e49cc87295cb
https://doi.org/10.1109/iit.2014.6939993
https://doi.org/10.1109/iit.2014.6939993
Autor:
T. Rockwell, Shan Tang, Chris Campbell, Harold Persing, Daniel Distaso, S. Salimian, K. Han, Ludovic Godet
Publikováno v:
AIP Conference Proceedings.
Process characterization of a novel plasma based conformai doping technique was conducted for arsenic dopant in terms of silicon amorphization, fin integrity, doping conformality, sheet resistance and main effect of doping process parameters. Doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141644b6d3f4b27f25dac79ad83c07a2
https://doi.org/10.1063/1.4766523
https://doi.org/10.1063/1.4766523
Publikováno v:
AIP Conference Proceedings.
Plasma doping (PLAD) has been adopted across the implant technology space and into high volume production for both conventional DRAM and NAND doping applications. PLAD has established itself as an alternative to traditional ion implantation by beamli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055825f4260f88e3f12f4b97ff904f44
https://doi.org/10.1063/1.4766491
https://doi.org/10.1063/1.4766491
Autor:
Edmund J. Winder, Vikram Singh, Z. Fang, T. M. Parrill, Harold Persing, Shu Qin, Edwin A. Arevalo, A. McTeer, Atul Gupta, Timothy J. Miller
Publikováno v:
AIP Conference Proceedings.
Plasma doping (PLAD) achieves high wafer throughput by directly extracting ions across the plasma sheath. PLAD profiles are typically surface peaked instead of retrograde as obtained from beamline (BL) implant. It may require optimization of PLAD ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f7b35548580f1713ec71ecdfc95ef0
https://doi.org/10.1063/1.2401506
https://doi.org/10.1063/1.2401506
Autor:
Ziwei Fang, Edwin A. Arevalo, T. M. Parrill, Harold Persing, Miller Timothy J, Edmund J. Winder, Vikram Singh
Publikováno v:
AIP Conference Proceedings.
As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases ∼1×1016 ions/cm2) at low ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd606097e8f0a5c991a71f20f942b19
https://doi.org/10.1063/1.2401568
https://doi.org/10.1063/1.2401568
Conference
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