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pro vyhledávání: '"Harold Huggins"'
Autor:
H. Ade, A. P. Hitchcock, G. E. Mitchell, A. L. D. Kilcoyne, T. Tyliszczak, R. Fink, T. Warwick, Kenneth Evans‐Lutterodt, Aaron Stein, James M. Ablett, And Chi‐Chang Kao, Don M. Tennant, Fred Klemens, Ashley Taylor, Chris Jacobsen, Peter L. Gammel, Harold Huggins, Scott Ustin, Greg Bogart, Leo Ocola
Publikováno v:
Synchrotron Radiation News. 16:53-63
Autor:
J.M. Anderson, David J. Brownell, G. A. Prinz, Jian-Gang Zhug, Luan V. Van, Harold Huggins, Joseph A. Christodoulides
Publikováno v:
Journal of Applied Physics. 97:10P504
Vertical magnetoresistive random access memory (VMRAM) is a high-density, nonvolatile memory that employs current perpendicular to the plane to switch soft (read) and hard (write) magnetic layers of a giant-magnetoresistive memory element. VMRAM cell