Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Harold Hearne"'
Autor:
Michael Ingram, Bettina Nechay, Victor Veliadis, Sharon Woodruff, Chris Lavoie, Megan Snook, David Giorgi, Harold Hearne
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 4:767-771
SiC device area is presently limited by material and processing defects. To meet the large current handling requirements of power conditioning systems, paralleling of a large number of devices is required. This can increase cost and complexity throug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fba10e9db627b3da3b0014e21afe21
https://doi.org/10.1109/jestpe.2016.2540518
https://doi.org/10.1109/jestpe.2016.2540518
Publikováno v:
Microelectronics Reliability. 55:2516-2521
A root cause failure investigation was performed on anomalous (early) MIM capacitor failures on an HBT MMIC process. These failures were only observed on capacitors in the actual MMICs; process control monitor (PCM) capacitors were nominal. Multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d0f4eaf838695a0b0d61d102d0d49a
https://doi.org/10.1016/j.microrel.2015.09.026
https://doi.org/10.1016/j.microrel.2015.09.026
Autor:
Eugene A. Imhoff, Stuart Davis, Bettina Nechay, Joseph M. White, Christian Lavoie, Megan Snook, Chris Kirby, Harold Hearne, Victor Veliadis, Sharon Woodruff
Publikováno v:
Materials Science Forum. :855-858
The multiple-zone junction termination extension (MJTE) is a widely used SiC edge termination technique that reduces sensitivity to implantation dose variations. It is typically implemented in multiple lithography and implantation events. To reduce p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d4f08fa5ee542416875bab2ad41f3f
https://doi.org/10.4028/www.scientific.net/msf.740-742.855
https://doi.org/10.4028/www.scientific.net/msf.740-742.855
Autor:
Victor Veliadis, Joseph M. White, Harold Hearne, Sharon Woodruff, Megan Snook, Bettina Nechay, Robert S. Howell, Stuart Davis, David Giorgi, Ty McNutt
Publikováno v:
Materials Science Forum. :961-964
To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a16e6ef4c2a0049dac4ac4cc03a4ca2
https://doi.org/10.4028/www.scientific.net/msf.717-720.961
https://doi.org/10.4028/www.scientific.net/msf.717-720.961
Autor:
Stuart Davis, Chris Kirby, Megan Snook, Sharon Woodruff, Harold Hearne, Bettina Nechay, Robert S. Howell, Ty McNutt, Joseph M. White, Victor Veliadis
Publikováno v:
Materials Science Forum. :977-980
The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10d8c01281cac5807678acc74a735ff
https://doi.org/10.4028/www.scientific.net/msf.717-720.977
https://doi.org/10.4028/www.scientific.net/msf.717-720.977
Autor:
Robert S. Howell, Stuart Davis, Harold Hearne, Sharon Woodruff, Victor Veliadis, Joseph M. White, Bettina Nechay, Ty McNutt, Megan Snook, David Giorgi
Publikováno v:
Materials Science Forum. :1171-1174
Modern power conditioning systems require large active area devices which can support high currents. Though the breakdown and thermal properties of SiC make it an excellent choice for power switching applications, active area size is currently limite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a09ec11c5df45e0fd4466cab54948f10
https://doi.org/10.4028/www.scientific.net/msf.717-720.1171
https://doi.org/10.4028/www.scientific.net/msf.717-720.1171
Autor:
Victor Veliadis, Damian Urciuoli, Aivars J. Lelis, Eric J. Stewart, Joshua D. Caldwell, Harold Hearne, Charles Scozzie, Robert S. Howell, Megan Snook, Wendi Chang
Publikováno v:
Materials Science Forum. :1013-1016
Electron-hole recombination-induced stacking faults have been shown to degrade the electrical characteristics of SiC power pin and MPS diodes and DMOSFETs with thick drift epitaxial layers. In this paper, we investigate the effects of bipolar injecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1027794c2a898a2efb6ca26d39888385
https://doi.org/10.4028/www.scientific.net/msf.717-720.1013
https://doi.org/10.4028/www.scientific.net/msf.717-720.1013
Autor:
Eric J. Stewart, Victor Veliadis, Aivars J. Lelis, Harold Hearne, Charles Scozzie, Robert S. Howell
Publikováno v:
Materials Science Forum. :929-932
A recessed implanted-gate short-channel 1290-V normally-OFF 4H-SiC vertical-channel JFET (VJFET), fabricated in seven photolithographic-levels, with a single masked ion-implantation and no epitaxial regrowth, is evaluated for efficient power conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a2796fe8e36ddecc70e1f09b147bc61
https://doi.org/10.4028/www.scientific.net/msf.645-648.929
https://doi.org/10.4028/www.scientific.net/msf.645-648.929
Publikováno v:
Materials Science Forum. :1147-1150
Bi-directional solid-state-circuit-breakers (SSCBs) are highly desirable in power-electronic fault-protection applications due to their high actuation speed and repeated fault isolation capability. Normally-on SiC vertical-channel JFETs (VJFETs) are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231d824e8d32c69d4a0fe57c3ebe7e88
https://doi.org/10.4028/www.scientific.net/msf.645-648.1147
https://doi.org/10.4028/www.scientific.net/msf.645-648.1147
Publikováno v:
Materials Science Forum. :711-714
High-voltage vertical-junction-field-effect-transistors (VJFETs) are typically designed normally-on to ensure low-resistance voltage-control operation at high current-gain. To exploit the high-voltage/temperature capabilities of VJFETs in a normally-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b4841174e986a9fc7aca757b2bbf00
https://doi.org/10.4028/www.scientific.net/msf.615-617.711
https://doi.org/10.4028/www.scientific.net/msf.615-617.711