Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Harmon, E. S."'
Publikováno v:
Journal of Applied Physics; 2/15/1995, Vol. 77 Issue 4, p1471, 6p, 2 Diagrams, 2 Charts, 5 Graphs
Publikováno v:
Department of Electrical and Computer Engineering Faculty Publications
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is demonstrated. By fixing the base-emitter voltage, the carrier injection into the base is constant. The collector current is then monitored as a functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::fccd8aecc99eac4c5826c88ab8579815
https://docs.lib.purdue.edu/ecepubs/105
https://docs.lib.purdue.edu/ecepubs/105
Publikováno v:
Department of Electrical and Computer Engineering Faculty Publications
Electrical measurements of the equilibrium np product (n2ie) in heavily doped n‐ and p‐GaAs were performed. The n2ieDproduct (where D is the diffusivity) was measured by fitting the collector current‐voltage characteristic of a homojunction bip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::b5de6be2dfab173cd0c9d7cdd5075cf7
https://docs.lib.purdue.edu/ecepubs/101
https://docs.lib.purdue.edu/ecepubs/101
Publikováno v:
Department of Electrical and Computer Engineering Faculty Publications
We present experimental evidence that minority electron transport across a thin, quasineutral p+ GaAs region is limited by the thermal velocity of the electrons rather than by conventional diffusive transport. A set of GaAs homojunction np+n transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::99da756c2419ef772c5e68fb287e4feb
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1136&context=ecepubs
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1136&context=ecepubs
Autor:
Harmon, E. S., Lovejoy, Michael L., Melloch, Michael R, Lundstrom, Mark S, de Lyon, T. J., Woodall, J. M.
Publikováno v:
Department of Electrical and Computer Engineering Faculty Publications
The variation of minority electron mobility with doping density in p+-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1 X lOI and 8 X 10” cmm3 show the mobility decreas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::5618700a77b2fe1820c7a844c570c80e
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1140&context=ecepubs
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1140&context=ecepubs
Publikováno v:
Department of Electrical and Computer Engineering Faculty Publications
The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molecular beam epitaxy are presented. To achieve Be dopant concentrations of greater than 8×1019 cm−3, the substrate temperature during growth was red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::544c65390ca086253e52de4961097431
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1150&context=ecepubs
https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1150&context=ecepubs
Publikováno v:
Critical Reviews in Solid State & Materials Science; Jan1996, Vol. 21 Issue 3, p189-263, 75p
Autor:
Melloch, M R, Woodall, J M, Harmon, E S, Otsuka, N, Pollak, F H, Nolte, D D, Feenstra, R M, Lutz, M A
Publikováno v:
Annual Review of Materials Research; Aug1995, Vol. 25 Issue 1, p547-600, 54p
Autor:
Melloch, M. R., Lahiri, I., Nolte, D. D., Chang, J. C. P., Harmon, E. S., Woodall, J. M., Li, N. Y., Tu, C. W.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 3, p2271-2274, 4p
Publikováno v:
Journal of the Optical Society of America B: Optical Physics; June 1994, Vol. 11 Issue: 6 p1038-1044, 7p