Zobrazeno 1 - 10
of 231
pro vyhledávání: '"Harmand, Jean Christophe"'
Autor:
Macías, Carlos a, b, Cavanna, Antonella a, Madouri, Ali a, Béchu, Solène c, Collin, Stéphane a, Harmand, Jean-Christophe a, Cattoni, Andrea d, Delamarre, Amaury a, ⁎
Publikováno v:
In Applied Surface Science 15 December 2024 676
Autor:
Bellet-Amalric, Edith, Panciera, Federico, Patriarche, Gilles, Travers, Laurent, Hertog, Martien den, Harmand, Jean-Christophe, Glas, Frank, Cibert, Joel
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid growth. We sho
Externí odkaz:
http://arxiv.org/abs/2112.06493
Autor:
Pavlov, Alexander, Mozharov, Alexey, Berdnikov, Yury, Barbier, Camille, Harmand, Jean-Christophe, Tchernycheva, Maria, Polozkov, Roman, Mukhin, Ivan
We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate
Externí odkaz:
http://arxiv.org/abs/2107.10231
Akademický článek
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Autor:
Chen, Hung-Ling, De Lépinau, Romaric, Scaccabarozzi, Andrea, Oehler, Fabrice, Harmand, Jean-Christophe, Cattoni, Andrea, Collin, Stéphane
Publikováno v:
Phys. Rev. Applied 15, 024007 (2021)
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence (CL) mappi
Externí odkaz:
http://arxiv.org/abs/1909.05602
Autor:
Chen, Hung-Ling, Scaccabarozzi, Andrea, De Lépinau, Romaric, Oehler, Fabrice, Lemaître, Aristide, Harmand, Jean-Christophe, Cattoni, Andrea, Collin, Stéphane
Publikováno v:
Phys. Rev. Applied 15, 024006 (2021)
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here, we use low
Externí odkaz:
http://arxiv.org/abs/1909.05598
Akademický článek
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Autor:
Jawher, Rayhani a, ∗, Oueslati, Mehrez b, Sallet, Vincent c, Harmand, Jean-Christophe d, Chtourou, Radhwen a
Publikováno v:
In Journal of Luminescence January 2023 253
Autor:
Assouline, Alexandre, Feuillet-Palma, Cheryl, Zimmers, Alexandre, Aprili, Marco, Harmand, Jean-Christophe, Aubin, Hervé
Publikováno v:
Phys. Rev. Lett. 119, 097701 (2017)
We present a study of Andreev Quantum Dots (QDots) fabricated with small-diameter (30 nm) Si-doped InAs nanowires where the Fermi level can be tuned across a mobility edge separating localized states from delocalized states. The transition to the ins
Externí odkaz:
http://arxiv.org/abs/1709.05251
Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure
Autor:
Jawher, Rihani a, ⁎, Oueslati, Mehrez b, Sallet, Vincent c, Harmand, Jean-Christophe d, Chtourou, Radhwen a
Publikováno v:
In Applied Surface Science Advances February 2022 7