Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Harlan Carl Cramer"'
Publikováno v:
Microelectronics Reliability. 55:2516-2521
A root cause failure investigation was performed on anomalous (early) MIM capacitor failures on an HBT MMIC process. These failures were only observed on capacitors in the actual MMICs; process control monitor (PCM) capacitors were nominal. Multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d0f4eaf838695a0b0d61d102d0d49a
https://doi.org/10.1016/j.microrel.2015.09.026
https://doi.org/10.1016/j.microrel.2015.09.026
Autor:
Matthew R. King, Robert S. Howell, Eric J. Stewart, Karen Renaldo, Jeff Hartman, Bettina Nechay, Justin Parke, Shalini Gupta, Ishan Wathuthanthri, Harlan Carl Cramer, Megan Snook, H. George Henry, Pavel Borodulin, Ron Freitag
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
High performance RF switch components are vital for the successful implementation of a variety of system architectures, ranging from phased array radars and multi-function sensors to the wireless components of mobile phones and consumer electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b629bab1a727d6a61d5e7298d07229
https://doi.org/10.1109/drc.2015.7175554
https://doi.org/10.1109/drc.2015.7175554
Autor:
Parrish Ralston, Karen Renaldo, Shalini Gupta, Ron Freitag, Eric J. Stewart, H. George Henry, Justin Parke, Bettina Nechay, Matthew R. King, R. Chris Clarke, Harlan Carl Cramer, Ishan Wathuthanthri, Megan Snook, Robert S. Howell, Jeffrey Hartman
Publikováno v:
2014 IEEE International Electron Devices Meeting.
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of I MAX >2.7 A/mm,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3cc0644b5e78f273f59abdc631e6b85
https://doi.org/10.1109/iedm.2014.7047033
https://doi.org/10.1109/iedm.2014.7047033
Autor:
Jeff Hartman, Bettina Nechay, Justin Parke, Karen Renaldo, Harlan Carl Cramer, Eric J. Stewart, Robert S. Howell, Parrish Ralston, Megan Snook, Shalini Gupta, Matthew R. King, Ishan Wathuthanthri, H. George Henry, Pavel Borodulin, Ron Freitag
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excelle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4042329cdf89fe2a7fca99d22d7df114
https://doi.org/10.1109/csics.2014.6978566
https://doi.org/10.1109/csics.2014.6978566
Autor:
Geetha S. Aluri, Sean McLaughlin, Harlan Carl Cramer, Albert V. Davydov, Abhishek Motayed, Dipak Paramanik, Sergiy Krylyuk, Matthew R. King, Shalini Gupta, Babak Nikoobakht
Publikováno v:
SPIE Proceedings.
We report the systematic etching profile of GaN nano pillar structures using inductively coupled plasma (ICP) etching techniques. We were able to control the side wall angle, sh ape and dimension of such nanoscale structures by carefully selecting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141d678c8fb8a9d195caac858a56f1ee
https://doi.org/10.1117/12.920836
https://doi.org/10.1117/12.920836
Realization of vertically-aligned GaN n-p core-shell nanoscale structures using top-down fabrication
Autor:
Matt King, Shalini Gupta, Albert V. Davydov, Babak Nikoobakht, Harlan Carl Cramer, Sergiy Krylyuk, Dipak Paramanik, Abhishek Motayed, Sean McLaughlin, Geetha S. Aluri
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Vertically aligned core-shell p-n nanostructures are technologically significant due to their potential applications in a variety of devices such as light-emitting diodes, laser diodes, photodetectors, and solar cells. Such structures developed in II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e52721cdabc6cbe939f2cf314dd40a7
https://doi.org/10.1109/isdrs.2011.6135306
https://doi.org/10.1109/isdrs.2011.6135306
Autor:
Matthew R. King, Albert V. Davydov, Sean McLaughlin, Harlan Carl Cramer, Sergiy Krylyuk, Dipak Paramanik, Abhishek Motayed, Geetha S. Aluri, Shalini Gupta, Jong-Yoon Ha
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:052202
This paper details the fabrication of GaN nanoscale structures using deep ultraviolet lithography and inductively coupled plasma (ICP) etching techniques. The authors controlled the geometry (dimensions and shape) and surface morphology of such nanos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e31b5c3e703a3d2089f24eb2695ce25
https://doi.org/10.1116/1.4739424
https://doi.org/10.1116/1.4739424