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pro vyhledávání: '"Harithshanmaa Sethupathi"'
Autor:
Karl D. Hirschman, Jason Konowitch, Rahnuma Rifat Chowdhury, Prashant Ganesh, Julia Okvath, Robert George Manley, Muhammad Salahuddin Kabir, Harithshanmaa Sethupathi
Publikováno v:
ECS Transactions. 86:125-133
The focus of this work is on the performance degradation of thermally stressed IGZO TFTs with SiO2 for both the gate dielectric and back-channel passivation material. The TFT fabrication process included a post-passivation 400 °C O2 anneal to adjust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b77a9e4d7a7322dbd2f416e91661bad
https://doi.org/10.1149/08611.0125ecst
https://doi.org/10.1149/08611.0125ecst
