Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Haris Osman"'
Autor:
Soeren Steudel, Johan Vertommen, Emmanuel Le Boulbar, Giuseppe Buscemi, Lars Bach, Stefaan Van Huylenbroeck, Hariharan Arumugam, Douglas Charles La Tulipe, Joeri De Vos, Andy Miller, Haris Osman, Kenneth June Rebibis
Publikováno v:
SID Symposium Digest of Technical Papers. 53:748-751
Autor:
Yunlong Li, Gauri Karve, Pawel E. Malinowski, Joo Hyoung Kim, Epimitheas Georgitzikis, Vladimir Pejovic, Myung-Jin Lim, Luis Moreno Hagelsieb, Renaud Puybaret, Itai Lieberman, Jiwon Lee, David Cheyns, Paul Heremans, Haris Osman, Deniz Sabuncuoglu Tezcan
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Aleksandrs Marinins, Cedric Rolin, Philippe Soussan, Haris Osman, Véronique Rochus, B. Figeys, D. S. Tezcan, Xavier Rottenberg, Denis Marcon, Bart Vereecke, Eleonora Storace, Jan Genoe, Kristof Lodewijks, Anabel De Proft, Roelof Jansen, Robert Gehlhaar, Paul Heremans, P. Helin, Sandeep S. Saseendran, Nga P. Pham
Publikováno v:
Optical Architectures for Displays and Sensing in Augmented, Virtual, and Mixed Reality (AR, VR, MR) II.
The coming of age of AR, VR and MR applications and usage scenarios relies on the development of ever-improved advanced light management systems, both for sensing (camera) and actuation (display), e.g., solid-state dToF or FMCW scanning or flash LiDA
Autor:
Andrea Firrincieli, Ph. Helin, A. Ray Chaudhuri, Nga P. Pham, Haris Osman, Silvia Lenci, Manuel Mannarino
Publikováno v:
OECC/PSC
This paper reports state-of-the-art values for a 200mm LPCVD silicon nitride platform in terms of layer thickness control; 1nm for a silicon nitride thickness of 400nm with low propagation loss 0.13dB/cm at 1520nm.
Autor:
Lan Peng, Koen De Leersnijder, Stefano Guerrieri, Deniz Sabuncuoglu Tezcan, Haris Osman, Celso Cavaco
Publikováno v:
International Symposium on Microelectronics. 2015:000594-000597
We show for the first time complete data on 200mm wafer to wafer copper oxide direct bonding of two metal levels. Both surface acoustic microscope (SAM) and cross-section scanning electron microscope (X-SEM) images taken across the bonded wafer pairs
Autor:
Farid Sebaai, Greet Verbinnen, Deniz Sabuncuoglu Tezcan, Jakob Visker, Lan Peng, Celso Cavaco, Haris Osman, Jan Van Olmen
Publikováno v:
ECS Transactions. 64:123-129
Top candidate to further improve the performance of CMOS image sensors while keeping up with the market demands for thinner, lighter, and more sophisticated applications such as smartphones and tablets, is backside illuminated (BSI) image sensors. In
Autor:
L. Haspeslagh, Agnes Verbist, Ann Witvrouw, Simone Severi, Bert Du Bois, Lianggong Wen, Robert Puers, B. Wang, Shuji Tanaka, J. De Coster, Gert Claes, Hendrikus Tilmans, Guy Vereecke, Haris Osman, B. Guo, R Van Hoof, I. De Wolf, Stefaan Decoutere, Philippe Helin
Publikováno v:
Journal of Microelectromechanical Systems. 21:110-120
This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm2 and differe
Autor:
Haris Osman, Nga P. Pham, Vasyl Motsnyi, Cindy Demeulemeester, Maarten Rosmeulen, Deniz Sabuncuoglu Tezcan
Publikováno v:
International Symposium on Microelectronics. 2011:000130-000135
This paper focuses on the substrate transfer process which is applied after the fabrication of LEDs on 4 inch Si (111) wafers comprising p and n contact formation to the GaN layer. After applying a passivation layer, a bonding metal is deposited. The
Autor:
Agnes Verbist, Bert Du Bois, Dries Van Thourhout, Ann Witvrouw, Jeroen De Coster, Rita Van Hoof, Haris Osman, Roel Beernaert, Herbert De Smet, George Bryce, Robert Puers, Simone Severi, Lianggong Wen, Luc Haspeslagh, S. Rudra
Publikováno v:
ECS Transactions. 33:799-812
In imec's 200mm fab a dedicated poly-SiGe above-IC MEMS (Micro Electro-Mechanical Systems) platform has been set up to integrate MEMS and its readout and driving electronics on one chip. In the Flemish project Gemini the possibilities of this platfor
Publikováno v:
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
This work reports a TiN coated contact implemented in a vertically actuated SiGe-based Nano-Electro-Mechanical (NEM) relay. It is shown that covering the bottom of the movable SiGe beam (the armature) with a TiN layer in the contact region will impro