Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Haripin Chandra"'
Autor:
Ravindra K. Kanjolia, Agnes Derecskei, Xinjian Lei, Ronald Martin Pearlstein, Robert Ridgeway, Rohit Narayanan Kavassery Ramesh, Sumit Agarwal, Xuezhong Jiang, Ryan J. Gasvoda, Haripin Chandra, Bhushan Zope, Wanxing Xu, Guo Liu
Publikováno v:
ECS Meeting Abstracts. :854-854
Autor:
Yves J. Chabal, Luis Fabián Peña, Ronald Martin Pearlstein, Manchao Xiao, Haripin Chandra, Anupama Mallikarjunan, Agnes Derecskei-Kovacs, Xinjian Lei, Charith E. Nanayakkara
Publikováno v:
The Journal of Physical Chemistry C. 120:10927-10935
In situ Fourier transform infrared (FTIR) spectroscopy is used to investigate silicon dioxide deposition on OH-terminated oxidized Si(100) surfaces using two aminosilanes, di-sec-butylaminosilane (DSBAS) and bis(tert-butylamino)silane (BTBAS), with o
Autor:
Manchao Xiao, Yves J. Chabal, Anupama Mallikarjunan, Eric C. Mattson, Ronald Martin Pearlstein, Luis Fabián Peña, Kolade A. Oyekan, Agnes Derecskei-Kovacs, Haripin Chandra, Xinjian Lei, Charith E. Nanayakkara
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 34(8)
Despite the success of plasma-enhanced atomic layer deposition (PEALD) in depositing quality silicon nitride films, a fundamental understanding of the growth mechanism has been difficult to obtain because of lack of in situ characterization to probe
Autor:
Anupama Mallikarjunan, Kirk Scott Cuthill, Meiliang Wang, Manchao Xiao, Xinjian Lei, Haripin Chandra
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:021509
Different precursors for atomic layer deposition of carbon doped silicon oxide have been investigated. The impact of precursor reactivity, the number of silicon-carbon bonds in the precursor, oxidant concentration and dosing time, and deposition temp
Autor:
Haripin Chandra, Ranji Vaidyanathan, Hugh B. Denham, Joe Cesarano, Paul Calvert, Sridhar Kasichainula
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 360:199-209
Toughness in hard biological tissues is associated with fibrous or lamellar structures that deflect or stop growing cracks. In some cases, such as nacreous shell, protein interlayers absorb much of the crack energy. In other tissues, such as tooth en
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Transparent conducting oxide (TCO) thin film is one of the key components in photovoltaic and display devices. Indium tin oxide (ITO) is the best known TCO material; however, its cost is high. Fluorinated tin oxide is one candidate to replace ITO as
Autor:
Anupama Mallikarjunan, Mark Leonard O'neill, Heather Regina Bowen, Haripin Chandra, Manchao Xiao, Bing Han, Ronald Martin Pearlstein, Agnes Derecskei-Kovacs, Xinjian Lei
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:01A137
Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even
Autor:
Ronald Martin Pearlstein, Mark Leonard O'neill, Bo Han, Agnes Derecskei-Kovacs, Liang Huang, Bing Han, Haripin Chandra, Manchao Xiao, Hansong Cheng, Xinjian Lei
Publikováno v:
Physical Chemistry Chemical Physics. 16:18501
A detailed reaction mechanism has been proposed for the full ALD cycle of Si3N4 deposition on the β-Si3N4(0001) surface using bis(diethylamino)silane (BDEAS) or bis(tertiarybutylamino)silane (BTBAS) as a Si precursor with NH3 acting as the nitrogen
Autor:
Hansong Cheng, Liang Huang, Manchao Xiao, Ronald Martin Pearlstein, Mark Leonard O'neill, Xinjian Lei, Bo Han, Agnes Derecskei-Kovacs, Haripin Chandra, Bing Han
Publikováno v:
The Journal of Physical Chemistry C. :130911145338002
The energy landscape of a full atomic layer deposition cycle to grow a layer of SiO2 on the hydroxylated SiO2(001) surface was systematically explored using density functional theory. A monoaminosi...