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This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::0cd5fc3953845689b2e17b909bc43fab
http://essuir.sumdu.edu.ua/handle/123456789/27883
http://essuir.sumdu.edu.ua/handle/123456789/27883
