Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hari Krishna Neupane"'
Publikováno v:
Bibechana, Vol 21, Iss 2 (2024)
<>Two dimensional (2D) materials are used to manufacture the various gadgets. Their properties are therefore appealing. In the present work, we have studied the structural, electronic, and magnetic properties of 2D bilayer hexagonal-Boron Nitride (h-
Externí odkaz:
https://doaj.org/article/cba6a29f127d49e3a4789114b60d041c
Publikováno v:
Advances in Condensed Matter Physics, Vol 2022 (2022)
First-principle calculations based on the spin-polarized density functional theory (DFT) with vdW corrections by DFT-D2 approach have been carried out to study structural, electronic, and magnetic properties of water-adsorbed graphene/MoS2 heterostru
Externí odkaz:
https://doaj.org/article/b707982010d34ba1bf1f312ccbcf4b13
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085218-085218-10 (2021)
Graphene (G) and hexagonal Boron Nitride (h-BN) are structurally similar materials but have very different electronic and magnetic properties. Heterostructures formed by the combination of these materials are of great research interest. To assess the
Externí odkaz:
https://doaj.org/article/a591803ec56048f388b9493be7922b9d
Publikováno v:
Bibechana, Vol 18, Iss 2 (2021)
It is interesting to understand the effect of defects in 2D materials because vacancy defects in 2D materials have novel electronic and magnetic properties. In this work, we studied electronic and magnetic properties of 1S vacancy defect (1Sv-MoS2),
Externí odkaz:
https://doaj.org/article/1bc5aacec385444a973626062f76b7b4
Publikováno v:
Advances in Condensed Matter Physics, Vol 2020 (2020)
In this work, we systematically studied the structure, and electronic and magnetic properties of van der Waals (vdWs) interface Graphene/MoS2 heterostructure (HS-G/MoS2) and C sites vacancy defects in HS-G/MoS2 materials using first-principles calcul
Externí odkaz:
https://doaj.org/article/a6da1b3339bf4ae882a79aebc632b531
Publikováno v:
Nepal Journal of Science and Technology. 20:55-66
The novel properties of pristine h-BN, oxygen (O) atom impurity defects in h-BN (h-B(N-O) and h-(B-O)N), one boron (1B) atom vacancy defect in h-BN (h-BN_1B) and one nitrogen (1N) atom vacancy defect in h-BN (h-BN_1N) materials are investigated by sp
Publikováno v:
Amrit Research Journal. 2:93-102
In this work, we have studied the electronic and magnetic properties of 1C atom vacancy defects in graphene (1Cv-d-G), 1N atom impurity defects in graphene (1NI-d-G) and 1O atom impurity defects in graphene (1OI-d-G) materials through first principle
Publikováno v:
The European Physical Journal B. 95
Publikováno v:
Journal of Nepal Physical Society. 7:1-8
Two-dimensional (2D) pristine and defected van der Waals (vdW) heterostructure (HS) materials open up fortune in nanoelectronic and optoelectronic devices. So, they are compatible for designing in the fields of device applications. In the present wor
Publikováno v:
Journal of Institute of Science and Technology. 26:43-50
Water adsorbed in MoS2 (wad-MoS2), 1S atom vacancy defect in wad-MoS2 (1S-wad-MoS2), 2S atoms vacancy defects in wad-MoS2 (2S-wad-MoS2), and 1Mo atom vacancy defect in wad-MoS2 (Mo-wad-MoS2) materials were constructed, and their structural, electroni