Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hari Balan"'
Autor:
Zeng-Yuan Wu, Chor Shu Cheng, Tze Ho Chan, Sriram Balasubramanian, Patrick Khoo, Hari Balan, Thanh Hoa Phung
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
This work reports a 55nm planar-bulk automotive grade high density (HD) 0.425 $\mu$m2 SRAM cell for use in Ultra Low power (ULP) applications. Excellent Vmin of 0.68V for 95% limited Yield (LY) has been demonstrated on 16Mb array without the use of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26dea83bc2b4d94ae872afc43965f0b8
https://doi.org/10.1109/edtm.2019.8731313
https://doi.org/10.1109/edtm.2019.8731313
Autor:
Kevin Khua, Tze Ho Simon Chan, Lei Liu, Hari Balan, Dianji Sui, Sriram Balasubramanian, W. P. Neo
Publikováno v:
IRPS
SRAMs used in automotive grade applications are required to meet stringent fail rate criteria through End-of-Life (EOL) operation. Current fail rate projections often involve Vmin testing at low voltages which introduce uncertainties due to the large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b6efb263fb8bf1ecb5ef3219a2b3f8
https://doi.org/10.1109/irps.2019.8720397
https://doi.org/10.1109/irps.2019.8720397
Autor:
Tze Ho Chan, Kevin Khua, Beiping Liu, Hari Balan, Sriram Balasubramanian, Zhihong Luo, W. P. Neo
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
We present an overview of the 40nm Ultra-Low Leakage (40ULL) SRAMs, aimed at Internet-of-Things (IoT) applications with stringent leakage requirements. We demonstrate SRAM standby leakage (Isb) reduction to ~1.5pA/bit with floating bitlines at 1.1V a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6baf26d7b114af815b2da98b1c991e16
https://doi.org/10.1109/icsict.2018.8565793
https://doi.org/10.1109/icsict.2018.8565793