Zobrazeno 1 - 10
of 686
pro vyhledávání: '"Hardtdegen H"'
Autor:
Heidtfeld, S., Adam, R., Kubota, T., Takanashi, K., Cao, D., Schmitz-Antoniak, C., Bürgler, D.E., Wang, F., Greb, C., Chen, G., Komissarov, I., Hardtdegen, H., Mikulics, M., Sobolewski, R., Suga, S., Schneider, C.M.
Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 April 2022 547
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic fields. Th
Externí odkaz:
http://arxiv.org/abs/1703.07143
Autor:
Sydoruk, V. A., Vitusevich, S. A., Hardtdegen, H., Petrychuk, M. V., Naumov, A. V., Korotyeyev, V. V., Kochelap, V. A., Belyaev, A. E.
We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect.
Externí odkaz:
http://arxiv.org/abs/1701.03970
Publikováno v:
Pis'ma v ZhETP, vol. 101, issue 9, page 703 (2015)
We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy s
Externí odkaz:
http://arxiv.org/abs/1504.06449
Publikováno v:
In FlatChem May 2020 21
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects
Externí odkaz:
http://arxiv.org/abs/1405.7799
Autor:
Rodenbücher, C., Gensch, T., Speier, W., Breuer, U., Pilch, M., Hardtdegen, H., Mikulics, M., Zych, E., Waser, R., Szot, K.
Publikováno v:
Appl. Phys. Lett., 103 (2013), 162904
Fluorescence-lifetime imaging microscopy (FLIM) was applied to investigate the donor distribution in SrTiO3 single crystals. On the surfaces of Nb- and La-doped SrTiO3, structures with different fluorescence intensities and lifetimes were found that
Externí odkaz:
http://arxiv.org/abs/1310.5813
We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$\Omega$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude
Externí odkaz:
http://arxiv.org/abs/1309.3253
Autor:
Gunel, H. Y., Batov, I. E., Hardtdegen, H., Sladek, K., Winden, A., Weis, K., Panaitov, G., Gruetzmacher, D., Schaepers, Th.
We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the
Externí odkaz:
http://arxiv.org/abs/1205.2289
Autor:
Hernández, S. Estévez, Akabori, M., Sladek, K., Volk, Ch., Alagha, S., Hardtdegen, H., Demarina, N., Grützmacher, D., Schäpers, Th., Pala, M. G.
We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the b
Externí odkaz:
http://arxiv.org/abs/1011.1556