Interface Design beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-Forbidden Interfaces.

Autor: Wang H; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany., Harbola V; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany., Wu YJ; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany., van Aken PA; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany., Mannhart J; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Aug; Vol. 36 (32), pp. e2405065. Date of Electronic Publication: 2024 Jun 12.

Interlayer engineering of Fe 3 GeTe 2 : From 3D superlattice to 2D monolayer.

Autor: Wu Y; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025.; Department of Electrical Engineering, Stanford University, Stanford, CA 94305.; Department of Physics, Stanford University, Stanford, CA 94305., Wang BY; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025.; Department of Physics, Stanford University, Stanford, CA 94305., Yu Y; Department of Applied Physics, Stanford University, Stanford, CA 94305., Li Y; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305., Ribeiro HB; Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA 94025., Wang J; Department of Applied Physics, Stanford University, Stanford, CA 94305., Xu R; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305., Liu Y; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305., Ye Y; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305., Zhou J; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305., Ke F; Department of Geological Science, Stanford University, Stanford, CA 94305., Harbola V; Department of Physics, Stanford University, Stanford, CA 94305., Heinz TF; Department of Applied Physics, Stanford University, Stanford, CA 94305.; Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA 94025., Hwang HY; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025.; Department of Applied Physics, Stanford University, Stanford, CA 94305., Cui Y; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025.; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.

Publikováno v: Proceedings of the National Academy of Sciences of the United States of America [Proc Natl Acad Sci U S A] 2024 Jan 23; Vol. 121 (4), pp. e2314454121. Date of Electronic Publication: 2024 Jan 17.

Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes.

Autor: Xu R; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA., Crust KJ; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Physics, Stanford University, Stanford, CA, 94305, USA., Harbola V; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Physics, Stanford University, Stanford, CA, 94305, USA., Arras R; CEMES, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, F-31055, Toulouse, France., Patel KY; Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Prosandeev S; Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Cao H; Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA., Shao YT; Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA.; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA., Behera P; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA., Caretta L; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.; School of Engineering, Brown University, Providence, RI, 02912, USA., Kim WJ; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA., Khandelwal A; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA., Acharya M; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Wang MM; Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA., Liu Y; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA., Barnard ES; The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA., Raja A; The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA., Martin LW; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Gu XW; Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA., Zhou H; X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA., Ramesh R; Department of Materials Science and Nanoengineering, Department of Physics and Astronomy, Rice University, Houston, TX, 77251, USA., Muller DA; Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA., Bellaiche L; Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Hwang HY; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2023 Apr; Vol. 35 (17), pp. e2210562. Date of Electronic Publication: 2023 Mar 19.

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Strain-induced room-temperature ferroelectricity in SrTiO 3 membranes.

Autor: Xu R; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA. rxu3@stanford.edu.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA. rxu3@stanford.edu., Huang J; School of Science, Westlake University, Hangzhou, 310012, Zhejiang, China., Barnard ES; The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA., Hong SS; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA., Singh P; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA., Wong EK; The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA., Jansen T; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA., Harbola V; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Physics, Stanford University, Stanford, CA, 94305, USA., Xiao J; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA., Wang BY; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.; Department of Physics, Stanford University, Stanford, CA, 94305, USA., Crossley S; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA., Lu D; Department of Physics, Stanford University, Stanford, CA, 94305, USA., Liu S; School of Science, Westlake University, Hangzhou, 310012, Zhejiang, China., Hwang HY; Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA. hyhwang@stanford.edu.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA. hyhwang@stanford.edu.

Publikováno v: Nature communications [Nat Commun] 2020 Jun 19; Vol. 11 (1), pp. 3141. Date of Electronic Publication: 2020 Jun 19.