Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Harald Suhr"'
Publikováno v:
Journal of Organometallic Chemistry. 514:23-28
Thin films of silicon carbide have been prepared by plasma enhanced chemical vapour deposition using Si(Si(CH3)3)4 as a precursor. This compound is stable against moisture and air and has a high vapour pressure. Furthermore, the compositions of the f
Publikováno v:
Plasma Chemistry and Plasma Processing. 15:371-381
A Langomir probe investigation of Ar/H2/Cp2HfMe2 plasmas is described. The probe measurements were performed for various discharge conditions. The mean electron energy and electron density were measured for various power, gas flows of argon, and hydr
Publikováno v:
Applied Physics A Materials Science & Processing. 60:285-288
Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2 Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters
Publikováno v:
Advanced Materials. 6:392-395
Autor:
Harald Suhr, P. Špatenka
Publikováno v:
Plasma Chemistry and Plasma Processing. 13:555-566
A Langmuir probe investigation of Ar/O2/Al(OPr1)3 plasmas is described. The probe contamination depends on the probe position and the flow of tine carrier gases. Whereus far from the working gas inlet characteristics without any hysteresis were obtai
Publikováno v:
Plasma Chemistry and Plasma Processing. 13:77-91
The dissociation of hydrogen sulfide has been studied in an atmospheric-pressure glow discharge rotating between concentric electrodes in an axial magnetic field. Though the electrodes were heated to remove the sulfur formed in the discharge, stable
Publikováno v:
ChemInform. 22
Publikováno v:
ChemInform. 24
Publikováno v:
ChemInform. 25