Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Harald Künzel"'
Autor:
L. A. Ponomarenko, V. A. Kulbachinskii, Harald Künzel, D.T.N. de Lang, A.M.M. Pruisken, A. de Visser, G. B. Galiev
Publikováno v:
Solid State Communications, 130(10), 705-710. Elsevier
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba6942b2522c7fcee5157bd786d24662
https://doi.org/10.1016/j.ssc.2004.02.021
https://doi.org/10.1016/j.ssc.2004.02.021
Autor:
Dieter Bimberg, G Urmann, S. Schelhase, S Thiel, R. Gibis, Harald Künzel, R. Steingruber, O. Stier
Publikováno v:
Journal of Crystal Growth. 209:499-503
Quantum dots based on InP/GaInAs quantum wells were realised using epitaxial infill regrowth into a hole array formed in InP by means of e-beam lithography and reactive ion etching. Metal organic molecular beam epitaxy has been applied for selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2df2c1f10926d84ec8d6c08ab5191df
https://doi.org/10.1016/s0022-0248(99)00605-3
https://doi.org/10.1016/s0022-0248(99)00605-3
Publikováno v:
Journal of Crystal Growth. 209:463-470
Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b7d90c20ca1778772a13c7ca92c5ced
https://doi.org/10.1016/s0022-0248(99)00599-0
https://doi.org/10.1016/s0022-0248(99)00599-0
Publikováno v:
Journal of Crystal Growth. :719-722
The regrowth behaviour of and dopant diffusion in (Ga)In(As)P : Fe layers selectively deposited by metalorganic MBE was assessed. Device quality regrowth and the absence of lateral diffusion and accumulation effects is demonstrated as an essential fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e8c46473d7433fba8842d7a1a29738f
https://doi.org/10.1016/s0022-0248(98)01454-7
https://doi.org/10.1016/s0022-0248(98)01454-7
Publikováno v:
Journal of Crystal Growth. 188:281-287
The fabrication of advanced undoped and semi-insulating optical waveguides to be implemented in integrated photonic ICs on InP is demonstrated on the basis of the metal organic molecular beam epitaxy growth technique. The optimised deposition of wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e8fa79c7f23202cb98b36d90bdfc455
https://doi.org/10.1016/s0022-0248(98)00042-6
https://doi.org/10.1016/s0022-0248(98)00042-6
Publikováno v:
Solid State Communications. 106:425-429
Energy exchange between nonequilibrium carriers and a two-dimensional electron plasma and subsequent carrier cooling are studied in femtosecond pump-probe experiments. (n = 1) electrons excited to the (n = 2) conduction subband via the midinfrared in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::681d2a4a13019413160460b8b81c6eae
https://doi.org/10.1016/s0038-1098(98)00078-7
https://doi.org/10.1016/s0038-1098(98)00078-7
Autor:
Harald Künzel, Michael Woerner, Robert A. Kaindl, Thomas Elsaesser, Andreas Hase, Vollrath M. Axt, Tilmann Kuhn, Bernd Nottelmann, S. Lutgen
Publikováno v:
Physical Review Letters. 80:3575-3578
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e33eb4c7df281672f9d4aca0c30d2fb
https://doi.org/10.1103/physrevlett.80.3575
https://doi.org/10.1103/physrevlett.80.3575
Publikováno v:
physica status solidi (b). 204:27-30
We present the first study of the ultrafast dynamics of coherent intersubband polarizations in a two-dimensional electron plasma using femtosecond four-wave-mixing in the mid-infrared. Experiments with modulation-doped GaInAs/AlInAs multiple-quantum-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff11bc8a9de4f7bd7855c1418c87cacd
https://doi.org/10.1002/1521-3951(199711)204:1<27::aid-pssb27>3.0.co
https://doi.org/10.1002/1521-3951(199711)204:1<27::aid-pssb27>3.0.co
Publikováno v:
Journal of Crystal Growth. :940-944
The incongruent evaporation of GaP source material using a conventional effusion cell equipped with a PBN scavenger at the orifice is demonstrated as a simple and cost-effective way to generate a pure P 2 molecular beam, suitable for the growth of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b6cc78e424f2c1392eff912af4b603
https://doi.org/10.1016/s0022-0248(96)00879-2
https://doi.org/10.1016/s0022-0248(96)00879-2
Autor:
Andreas Hase, Duilio Meglio, Paolo Lugli, Robert A. Kaindl, S. Lutgen, Harald Künzel, Michael Woerner, M. Gulia, Thomas Elsaesser
Publikováno v:
Physical Review Letters. 77:3657-3660
The dynamics of electrons in GaInAs/AlInAs quantum wells is studied after excitation from the $n\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1$ to the $n\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}2$ conduction subband. Femtosecond pump-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::974a5a5464c7f5f0c4d7536f28ce4b3c
https://doi.org/10.1103/physrevlett.77.3657
https://doi.org/10.1103/physrevlett.77.3657