Zobrazeno 1 - 10
of 146
pro vyhledávání: '"Harald Gossner"'
Autor:
Lucas Speckbacher, Amin Pak, Mehdi Gholizadeh, Seyed Mostafa Mousavi, David Johannes Pommerenke, Harald Gossner
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 64:1812-1819
Publikováno v:
IEEE Transactions on Electron Devices. 69:5074-5081
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 63:375-383
In this article, electrostatic discharge (ESD) induced soft failures (SFs) of a USB3 Gen1 device are investigated by direct transmission line pulse injection with varying pulsewidth, amplitude, and polarity to characterize the failure behavior of the
Publikováno v:
IEEE Transactions on Electron Devices. 67:4728-4735
This article explores the scope of drain-extended FinFET (DeFinFET) as a high-voltage (HV) device contender for Fin-based SoC applications. For the first time, guidelines for efficient and reliable HV integration in sub-14 nm FinFET nodes are given.
Publikováno v:
IEEE Transactions on Electron Devices. 67:2717-2724
Single and multi-Fin behavior of drain-extended FinFET (DeFinFET) devices under low and high current injection conditions is studied using detailed 3-D TCAD simulations. For completeness, electrostatic discharge (ESD) behavior of both shallow trench
Publikováno v:
IEEE Transactions on Electron Devices. 67:2745-2751
This article presents a simultaneous impact of selective contact silicidation, silicide, and junction engineering on bulk FinFET’s electrostatic discharge (ESD) reliability, latch-up (LU) robustness, and hot carrier-induced (HCI) degradation. The i
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 62:16-24
In this paper, we present a methodology to characterize the I/O pins of a logic IC such as an application processor or ASIC with respect to soft-failure susceptibility due to electrostatic discharge. With the IC in a functional system, variable stres
Autor:
Milova Paul, Harald Gossner, Pulkit Singhal, Kranthi Karmel Nagothu, Mayank Shrivastava, B. Sampath Kumar
Publikováno v:
IEEE Transactions on Electron Devices. 66:5072-5079
This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection device and a self-p
Publikováno v:
IEEE Letters on Electromagnetic Compatibility Practice and Applications. 1:67-71
ESD-induced latch up is detected with an on-die energy counter circuit. Raw values are accessed through a Linux operating system kernel call, then the power consumption is calculated. Persistent power consumption increase indicates the latch-up occur