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pro vyhledávání: '"Haque, Asraful"'
Autor:
Haque, Asraful, Mandal, Suman Kumar, Parate, Shubham Kumar, Dsouza, Harshal Jason, Chandola, Sakshi, Nukala, Pavan, Raghavan, Srinivasan
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene
Externí odkaz:
http://arxiv.org/abs/2408.07920
Autor:
Haque, Asraful, D'Souza, Harshal Jason, Parate, Shubham Kumar, Sandilya, Rama Satya, Raghavan, Srinivasan, Nukala, Pavan
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal subst
Externí odkaz:
http://arxiv.org/abs/2407.11338
Autor:
Haque, Asraful, Mandal, Suman Kumar, Jeyaseelan, Antony, Vura, Sandeep, Nukala, Pavan, Raghavan, Srinivasan
Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at
Externí odkaz:
http://arxiv.org/abs/2307.03342
Autor:
Haque, Asraful, Mandal, Suman Kumar, Jeyaseelan, Antony, Vura, Sandeep, Nukala, Pavan, Raghavan, Srinivasan
Publikováno v:
In Materials Today Electronics June 2024 8
Publikováno v:
In Advanced Powder Technology December 2018 29(12):3427-3439