Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Haoyu Zhuang"'
Publikováno v:
Electronics Letters, Vol 59, Iss 13, Pp n/a-n/a (2023)
Abstract This paper proposes a novel curvature‐correction technique insensitive to process variations, which can be used in not only the bandgap reference (BGR) circuit but also the Zener reference circuit. By using two BJT transistors to form a di
Externí odkaz:
https://doaj.org/article/850771ad34164255add5be14cd576e24
Publikováno v:
Electronics Letters, Vol 59, Iss 8, Pp n/a-n/a (2023)
Abstract This paper proposes a novel bandgap voltage reference (BGR) with low temperature coefficient, ultra‐low noise and without start‐up circuit. Designed in a TSMC 180‐nm CMOS technology, this bandgap voltage reference operates in the tempe
Externí odkaz:
https://doaj.org/article/89991babef52443c806ed25545c251e3
Publikováno v:
Electronics Letters, Vol 59, Iss 8, Pp n/a-n/a (2023)
Abstract This letter proposes a novel bandgap reference circuit that utilizes both curvature and folding compensation to achieve a temperature coefficient (TC) of 2.23 ppm/°C. Unlike traditional BGRs, the unique folding compensation method of this c
Externí odkaz:
https://doaj.org/article/eeb80ee5f4854dbe84190e4c463000dc
Publikováno v:
IEEE Access, Vol 8, Pp 203294-203300 (2020)
This paper presents a high-resolution, high-gain, wide-input-output-swing open-loop charge steering amplifier for pipelined successive-approximation-register (SAR) analog-to-digital converter (ADC). Compared to prior charge-steering amplifiers where
Externí odkaz:
https://doaj.org/article/aac837aef9e7405faeb129709880f2ab
Autor:
Luyao Wang, Chu Zhang, Lu Yang, Shuwei Li, Hang Chu, Xiangfei Li, Ying Meng, Haoyu Zhuang, Yurui Gao, Zhiwei Hu, Jin-Ming Chen, Shu-Chih Haw, Cheng-wei Kao, Ting-Shan Chan, Xi Shen, Zhaoxiang Wang, Richeng Yu
Publikováno v:
ACS Applied Materials & Interfaces. 15:11756-11764
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 70:366-370
Publikováno v:
IEEE Transactions on Biomedical Circuits and Systems. 17:45-53
Publikováno v:
IEEE Transactions on Power Electronics. :1-9
Autor:
Qinwen Guo, Chengpeng Hu, Xiangfei Li, Ying Meng, Luyao Wang, Haoyu Zhuang, Xi Shen, Yuan Yao, Hao Tian, Zhongxiang Zhou, Richeng Yu
Publikováno v:
Journal of Materials Chemistry A. 11:10828-10833
The built-in flexoelectric effect serves as a restoring force for reversible non-180° ferroelectric domain switching in the compositionally graded (K,Na)NbO3 single crystal, and thus enhances the piezoelectric properties.
Publikováno v:
2023 IEEE Custom Integrated Circuits Conference (CICC).