Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Haoyang You"'
Autor:
Boxue Hu, Zhuo Wei, Haoyang You, Risha Na, Rui Liu, Han Xiong, Pengyu Fu, Julia Zhang, Jin Wang
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 225-235 (2021)
Medium-voltage (e.g., 10 kV rated) silicon carbide (SiC) devices have great potentials in medium-voltage variable speed drives. But their high switching dv/dt can increase the voltage stress on motor windings and cause partial discharges. This paper
Externí odkaz:
https://doaj.org/article/ac54adaa062544a5b60ff6179c9f9775
Publikováno v:
IEEE Transactions on Transportation Electrification. 8:1674-1683
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956a287f28eb6f3813eb1ff35d230fd2
https://doi.org/10.1109/tte.2021.3124741
https://doi.org/10.1109/tte.2021.3124741
Publikováno v:
IEEE Transactions on Power Electronics. 36:2611-2620
The unprecedented high-speed switching of wide bandgap power devices may change the partial discharge (PD) behaviors of power modules, busbars, and loads. However, very little research has been published on PD behaviors under square-wave pulses with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0e7a6543543e0dba75d87578a52f8a
https://doi.org/10.1109/tpel.2020.3014043
https://doi.org/10.1109/tpel.2020.3014043
Autor:
Yizhou Cong, Nihanth Adina, Zhuo Wei, Haoyang You, Rob Borjas, Xintong Lyu, Pengyu Fu, Boxue Hu, Jin Wang
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05057c4897722fdbcb694f36ad93b29
https://doi.org/10.1109/wipda49284.2021.9645119
https://doi.org/10.1109/wipda49284.2021.9645119
Autor:
Alec Schnabel, Jayanth Regatti, Jin Wang, Abhishek Gupta, Haoyang You, Boxue Hu, Han Wang, Jon Hall, Julia Zhang
Publikováno v:
2021 IEEE International Electric Machines & Drives Conference (IEMDC).
With the increasing power rating of wide bandgap (WBG) devices in parallel, the system reliability encounters unprecedented challenges. Artificial intelligence (AI) methods could be introduced to monitor device health conditions and realize intellige
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e0b25748dbfd1c50d2713e6c6b8fc7
https://doi.org/10.1109/iemdc47953.2021.9449599
https://doi.org/10.1109/iemdc47953.2021.9449599
Autor:
Jayanth Regatti, Jin Wang, Abhishek Gupta, Alec Schnabel, Han Wang, Boxue Hu, Julia Zhang, Jon Hall, Haoyang You
Publikováno v:
2021 IEEE International Electric Machines & Drives Conference (IEMDC).
Despite the several advantages, SiC MOSFETs suffer from issues such as low current carrying capacity, device degradation, etc. In this study, we explore the applications of Artificial Intelligence algorithms in optimizing the operation of SiC MOSFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a543e948cb14483f9ed8828630d61c
https://doi.org/10.1109/iemdc47953.2021.9449497
https://doi.org/10.1109/iemdc47953.2021.9449497
Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
A lightweight high power-density low inductance power module design is presented in this paper. This power module utilizes vertical loop design to reduce the stray inductance. Various ceramic materials have been explored for the design as baseplate m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aafbbc0cf9ed45654b21ebba0b4b95a
https://doi.org/10.1109/apec39645.2020.9124073
https://doi.org/10.1109/apec39645.2020.9124073
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 24:876-885
Free particles formed in the discharge process or equipment aging severely threaten the operation security of GIS, which draws great attention of researchers. However, seldom research focuses on disc-type particle, which is the majority of shaped par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::812c70ca55fb31275d6c1360ddf46b67
https://doi.org/10.1109/tdei.2017.006210
https://doi.org/10.1109/tdei.2017.006210
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 24:893-900
Operating experience shows that residual DC voltage remains in GIS bus bar for a long time after opening of disconnectors. This DC voltage will not only cause accumulation of charges and contaminants on the insulator surface, but will also easily lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fab7374673cb22a9c7a26bb3b924c13
https://doi.org/10.1109/tdei.2017.006535
https://doi.org/10.1109/tdei.2017.006535
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 24:2132-2140
The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa088f8ca8b9fc5fdafbaf50e3b2798
https://doi.org/10.1109/tdei.2017.006258
https://doi.org/10.1109/tdei.2017.006258