Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Haoren Zhuang"'
Autor:
Arifuzzaman (Arif) Sheikh, J. Chen, Michael V. Aquilino, Mukesh Khare, James Chingwei Li, Weipeng Li, X. Chen, Laegu Kang, G. Massey, J. Sudijono, An L. Steegen, Vijay Narayanan, Jin-Ping Han, M. Zaleski, Rashmi Jha, Haoren Zhuang, M. Chowdhury, C. Reddy, Douglas D. Coolbaugh, Yi-Wei Lee, Michael P. Chudzik, Kenneth J. Stein, Zhenrong Jin, Shesh Mani Pandey, D. Tekleab, S. Samavedam, Christopher V. Baiocco, Haining Yang, Deleep R. Nair, JiYeon Ku, Chandrasekharan Kothandaraman, Craig S. Lage, Jaeger Daniel, R. Mo, C. Hobbs, S. Kalpat, Da Zhang, Naim Moumen, Nam-Sung Kim, S. Kirshnan, J. Wallner, X. Wang, R. Lindsay, Melanie J. Sherony, Aaron Thean, Young Way Teh
For the first time, we have demonstrated a 32nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 μm2. Record NMOS/PMOS drive currents of 1000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad4bb3545ca27a0a35b2cac57515af2c
https://doi.org/10.1109/vlsit.2008.4588573
https://doi.org/10.1109/vlsit.2008.4588573
Publikováno v:
Nanostructured Materials. 7:675-689
Flame aerosol reactors are a route for large scale processing of nanostructured materials. However, fundamentals about processing-structure-property relationships have not been extensively researched. This work utilized three different burners to obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38da779c3801fd1c54613d0eb172669f
https://doi.org/10.1016/0965-9773(96)00033-5
https://doi.org/10.1016/0965-9773(96)00033-5
Autor:
Haoren Zhuang, Takeshi Nomura
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 41:1117-1122
The densities and properties of MnZn ferrite powder treated at different conditions have been investigated with the purposes to control the density of green compact and to study the relationship between compressibility and the powder properties. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57338ae82fd6ed50d866bc61727b9ef1
https://doi.org/10.2497/jjspm.41.1117
https://doi.org/10.2497/jjspm.41.1117
Autor:
Haoren Zhuang, Martin Ostermayr, Meng Luo, Henning Haffner, Bradley Morgenfeld, Chan Sam Chang, Hideki Kanai, Jujin An
Publikováno v:
SPIE Proceedings.
The paper describes a process/design co-optimization effort based on an SRAM design to enable a single exposure contact process for the 28nm technology half node. As a start, a change to the wiring concept of the standard SRAM design was implemented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fdf5c9729f7cbd5a038ef9fc4643b96
https://doi.org/10.1117/12.879681
https://doi.org/10.1117/12.879681
Autor:
Jie Chen, Laertis Economikos, Lindsey H. Hall, Haoren Zhuang, Jin Z. Wallner, Jay W. Strane, Walter Kleemeier, J. Sudijono, Paul Ferreira, Connie Truong, Cindy Goldberg, Xiaomeng Chen, Ron Sampson, Yongsik Moon, Rajasekhar Venigalla, Changyong Xiao, John H. Zhang, Derek C. Stoll
Publikováno v:
MRS Proceedings. 1335
Chemical Mechanical Polish (CMP) is one of the key technologies for the development of modern high performance integrated circuits. The requirements for the CMP uniformity get extremely demanding in order to meet the litho requirements for 32nm techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a77b56537d794a972246b39feda9f5d
https://doi.org/10.1557/opl.2011.854
https://doi.org/10.1557/opl.2011.854
Autor:
Melanie J. Sherony, J. Liang, M. Voelker, Myung-Hee Na, Jaeger Daniel, Kathy Barla, Y. Goto, G. Yang, Katsura Miyashita, Frank Scott Johnson, J.H. Park, R. Sampson, Jenny Lian, Kenneth J. Stein, JiYeon Ku, Christophe Bernicot, Knut Stahrenberg, S. Miyake, J. Sudijono, Haoren Zhuang, Li-Hong Pan, Ricardo A. Donaton, Martin Ostermayr, Gen Tsutsui, Manfred Eller, Richard A. Wachnik, S. Kohler, K. Kim, Wai-kin Li, Christian Wiedholz, M. Celik, Atsushi Azuma, An L. Steegen, T. Shimizu, Anda Mocuta, J.-P. Han, E. Kaste, H. van Meer, Masafumi Hamaguchi, Deleep R. Nair, N-S. Kim, Franck Arnaud, W. Neumueller, D. Chanemougame
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ced71a741b8bf85c300152efdb2927b
https://doi.org/10.7567/ssdm.2010.c-6-5l
https://doi.org/10.7567/ssdm.2010.c-6-5l
Publikováno v:
Journal of Materials Research. 7:2355-2359
Superconducting YBa2Cu4O8 ceramics were synthesized by the sol-gel method using corresponding metal acetates as starting materials, water as solvent, and tartaric acid under 1 atm oxygen pressure. YBa2Cu4O8 powder was obtained as a single phase by he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24e77434bcacbd362067448805ce646
https://doi.org/10.1557/jmr.1992.2355
https://doi.org/10.1557/jmr.1992.2355
Autor:
M. Hatzistergos, Christian Pacha, Haoren Zhuang, Melanie J. Sherony, Yong Meng Lee, T.J. Tang, S. Han, S. Samavedam, Jens Haetty, Sun-OO Kim, Martin Ostermayr, R. Divakaruni, V.-Y. Theon, Weipeng Li, Kenneth J. Stein, Michael P. Chudzik, Haizhou Yin, X. Chen, Richard Lindsay, J.-P. Han, M. Chowdhury, Jaeger Daniel, Naim Moumen, Dae-Gyu Park, Nam-Sung Kim, Kisang Kim, Manfred Eller, Dominic J. Schepis, Rainer Loesing, Mukesh Khare, J. Chen, K. von Arnim, An L. Steegen, Thomas S. Kanarsky, Vijay Narayanan, W. Yan, Klaus Schruefer
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
This paper presents performance evaluation of high-κ/metal gate (HK/MG) process on an industry standard 45nm low power microprocessor built on bulk substrate. CMOS devices built with HK/MG demonstrate 50% improvement in NFET and 65% improvement in P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85726ae47609ee2928b18dfa8334b007
https://doi.org/10.1109/vtsa.2009.5159305
https://doi.org/10.1109/vtsa.2009.5159305
Autor:
J. Pape, Nam-Sung Kim, Martin Ostermayr, Deleep R. Nair, Melanie J. Sherony, Craig S. Lage, Jaeger Daniel, Franck Arnaud, Y. Gao, Deok-Hyung Lee, H.S. Yang, C. Schiller, X. Chen, S. Stiffler, An L. Steegen, Kenneth J. Stein, J. Sudijono, Christopher V. Baiocco, Haoren Zhuang, Robert C. Wong, Y. Takasu, Ho-Kyu Kang, Sayeed A. Badrudduza, J. Wallner, Laegu Kang, James Chingwei Li, Aaron Thean, Y.W. Teh, L. Zhuang, R. Hasumi, S. Samavedam, D.P. Sun, Mukesh Khare
Publikováno v:
2008 IEEE International Electron Devices Meeting.
This paper describes SRAM scaling for 32 nm low power bulk technology, enabled by high-K metal gate process, down to 0.149 mum2 and 0.124 mum2. SRAM access stability and write margin are significantly improved through a 50% Vt mismatch reduction, tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc347a597544ead57bce41996b65ef0
https://doi.org/10.1109/iedm.2008.4796660
https://doi.org/10.1109/iedm.2008.4796660
Autor:
Allen H. Gabor, Scott Halle, Helen Wang, Henning Haffner, Chandrasekhar Sarma, Len Y. Tsou, Haoren Zhuang, Klaus Herold
Publikováno v:
Optical Microlithography XXI.
As SRAM arrays become lithographically more aggressive than random logic, they are more and more determining the lithography processes used. High yielding, low leakage, dense SRAM cells demand fairly aggressive lithographic process conditions. This l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3dd6ec3c08691e8a2edf8a8309ad50
https://doi.org/10.1117/12.772985
https://doi.org/10.1117/12.772985