Zobrazeno 1 - 10
of 321
pro vyhledávání: '"Haond, M."'
Publikováno v:
In Solid State Electronics September 2019 159:77-82
Publikováno v:
In Solid State Electronics February 2017 128:10-16
Autor:
Pereira, A.S.N., de Streel, G., Planes, N., Haond, M., Giacomini, R., Flandre, D., Kilchytska, V.
Publikováno v:
In Solid State Electronics February 2017 128:67-71
Autor:
Berthelon, R., Andrieu, F., Ortolland, S., Nicolas, R., Poiroux, T., Baylac, E., Dutartre, D., Josse, E., Claverie, A., Haond, M.
Publikováno v:
In Solid State Electronics February 2017 128:72-79
Autor:
Kazemi Esfeh, B., Kilchytska, V., Barral, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P.
Publikováno v:
In Solid State Electronics March 2016 117:130-137
Publikováno v:
In Solid State Electronics January 2016 115 Part B:219-224
Autor:
Makovejev, S., Kazemi Esfeh, B., Barral, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P., Kilchytska, V.
Publikováno v:
In Solid State Electronics June 2015 108:47-52
Autor:
Hamioud, K., Arnal, V., Farcy, A., Jousseaume, V., Zenasni, A., Icard, B., Pradelles, J., Manakli, S., Brun, Ph., Imbert, G., Jayet, C., Assous, M., Maitrejean, S., Galpin, D., Monget, C., Guillan, J., Chhun, S., Richard, E., Barbier, D., Haond, M.
Publikováno v:
In Microelectronic Engineering 2010 87(3):316-320
Autor:
Kazemi Esfeh, Babak, Masselus, Matthieu, Planes, N., Haond, M., Raskin, Jean-Pierre, Flandre, Denis, Kilchytska, Valeriya, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2017
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures. Electrostatic, Analog and RF Figures of Merit (FoM) are studied for the first time to our best knowledge. At cryogenic temperatures, 30-50% enhancem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::22a969655d9a768614d21ad4adc2ff81
https://hdl.handle.net/2078.1/197096
https://hdl.handle.net/2078.1/197096
Autor:
Kazemi Esfeh, Babak, Kilchytska, Valeriya, Planes, N., Haond, M., Flandre, Denis, Raskin, Jean-Pierre, IEEE S3S Conference
This work presents, for the first time to our best knowledge, RF characterization of 28 nm FDSOI CMOS process at cryogenic temperatures including extraction of parasitic elements of small-signal equivalent circuit and two main RF Figures of Merit (Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::330560bbeecbd4098e99526810710ee9
https://hdl.handle.net/2078.1/212205
https://hdl.handle.net/2078.1/212205