Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Haonan FENG"'
Autor:
Shuxin Li, Wenxin Lin, Haonan Feng, Paul W. M. Blom, Jiangxia Huang, Jiahao Li, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Quan Niu, Yuguang Ma
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract Although quantum dot light‐emitting diodes (QLEDs) are extensively studied nowadays, their charge transport mechanism remains a subject of ongoing debate. Here, the hole transport in blue quantum dots (QDs) (CdZnSe/ZnSe/ZnS/CdZnS/ZnS based
Externí odkaz:
https://doaj.org/article/0a0aaea492c84705b92e5b7233d080e0
Publikováno v:
Chengshi guidao jiaotong yanjiu, Vol 27, Iss 2, Pp 112-116 (2024)
[Objective] To carry out rapid fault diagnosis and locating for urban rail transit CBTC (communication-based train control) system, a real-time fault monitoring and locating method based on time constraints is proposed, focusing on system network mon
Externí odkaz:
https://doaj.org/article/41cbe2d2665f4dabb1662a7430c7b756
Publikováno v:
Engineering Reports, Vol 5, Iss 6, Pp n/a-n/a (2023)
Abstract Circuit faults are caused by the change of device parameters in the analog circuit. Aiming at the problems that the fault feature extraction is difficult and the fault signal cannot be effectively classified, an enhanced Harris Hawks algorit
Externí odkaz:
https://doaj.org/article/4abb4f8a996e431d9380911884cb46e1
Publikováno v:
EURASIP Journal on Wireless Communications and Networking, Vol 2022, Iss 1, Pp 1-18 (2022)
Abstract With the continuous development of mobile edge computing and the improvement of unmanned vehicle technology, unmanned vehicle could handle ever-increasing demands. As a significant application of unmanned vehicle, spatial crowdsourcing will
Externí odkaz:
https://doaj.org/article/94a12cd0908f4b59ac033200984fb333
Publikováno v:
Energies, Vol 12, Iss 20, p 3937 (2019)
Recently, deep learning technology was successfully applied to mechanical fault diagnosis. The convolutional neural network (CNN), as a prevalent deep learning model, occupies a place in intelligent fault diagnosis, which reduces the need for human f
Externí odkaz:
https://doaj.org/article/bbb29e74244e4aa0b66b91bb42069ec1
Autor:
Xiaowen Liang, Xiaojuan Pu, Haonan Feng, Jing Sun, Ying Wei, Dan Zhang, Yudong Li, Xuefeng Yu, Qi Guo
Publikováno v:
Radiation Effects and Defects in Solids. 178:510-520
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede872bb56e5d2be9173603a057cfa83
https://doi.org/10.1080/10420150.2022.2163485
https://doi.org/10.1080/10420150.2022.2163485
Autor:
Guo, Xiaowen Liang, Haonan Feng, Yutang Xiang, Jing Sun, Ying Wei, Dan Zhang, Yudong Li, Jie Feng, Xuefeng Yu
Publikováno v:
Electronics; Volume 12; Issue 13; Pages: 2886
This work presents an experimental study of heavy-ion irradiation with different particle linear energy transfer (LET), gate biases, and drain biases. The results reveal that when the irradiation biases are low, the SiC MOSFET does not experience sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::843492d3122fa183401b9719519d7d51
Autor:
Haonan Feng, Xiaowen Liang, Xiaojuan Pu, Yutang Xiang, Teng Zhang, Ying Wei, Jie Feng, Jing Sun, Dan Zhang, Yudong Li, Xuefeng Yu, Qi Guo
Publikováno v:
Electronics; Volume 12; Issue 11; Pages: 2398
SiC power devices require resistance to both single-event effects (SEEs) and total ionizing dose effects (TIDs) in a space radiation environment. The split-gate-enhanced VDMOSFET (SGE-VDMOSFET) process can effectively enhance the radiation resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f25ffabdbe4068531e6e0033292c7f9b
Autor:
Daolin Ji, Li Hou, Chunyang Xie, Haonan Feng, Dongdong Bao, Yue Teng, Junhao Liu, Tiangang Cui, Xiuhong Wang, Yi Xu, Gang Tan
Publikováno v:
Journal of Oncology. 2022:1-19
Objectives. Deoxyelephantopin (DET) is a kind of natural active ingredient extracted from the Chinese herbal medicine Elephantopus scaber L. Many studies have revealed the potential antitumor effect on multiple malignancies. However, the detailed mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cd82b377abed9df8baee8029637e74d
https://doi.org/10.1155/2022/3855462
https://doi.org/10.1155/2022/3855462
Autor:
Xiaojuan Pu, Ying Wei, Xiaolong Li, Haonan Feng, Xiaowen Liang, Jie Feng, Jing Sun, Xuefeng Yu, Qi Guo
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:809-813
The total ionizing dose (TID) radiation effect of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) was investigated at different dose rates. The influence of irradiation dose rate on the transfer characteristic curves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab79ca10daf37a2e91ac42950a137159
https://doi.org/10.1166/jno.2022.3254
https://doi.org/10.1166/jno.2022.3254