Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Haomiao Wei"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 717-722 (2024)
The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of anodes by changing the diode arrangement to improve po
Externí odkaz:
https://doaj.org/article/2bc2ac599bd845e09dd8cd4a3a9842ff
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 43:983-994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f825335ab45f83037d68abaec57440
https://doi.org/10.1007/s10762-022-00885-z
https://doi.org/10.1007/s10762-022-00885-z
This paper presents an accurate design method applied to the terahertz broadband multipliers. The design method is divided into two steps: a self-consistent electro-thermal (E-T) model with frequency-dependent spreading resistance and an external mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a080039838bbdb6ef647b18960266957
https://doi.org/10.21203/rs.3.rs-2292488/v1
https://doi.org/10.21203/rs.3.rs-2292488/v1
This paper presents a comprehensive electro-thermal (E-T) design method applied to the circuit design of the multipliers, which intends to improve the design flexibility and simulation reliability of the broadband frequency multiplier.The design meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ed1373be637fa894089ddb6fd311c68
https://doi.org/10.21203/rs.3.rs-2039838/v1
https://doi.org/10.21203/rs.3.rs-2039838/v1
Publikováno v:
2022 IEEE MTT-S International Wireless Symposium (IWS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16bf6fdadabd07f3f3507107f974259
https://doi.org/10.1109/iws55252.2022.9977890
https://doi.org/10.1109/iws55252.2022.9977890
Publikováno v:
IEICE Electronics Express. 20:20230114-20230114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758a34ddeff38e0a592144556755fe28
https://doi.org/10.1587/elex.20.20230114
https://doi.org/10.1587/elex.20.20230114
Autor:
Bo Wang, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding, Zhi Jin
Publikováno v:
Electronics, Vol 11, Iss 259, p 259 (2022)
Electronics; Volume 11; Issue 2; Pages: 259
Electronics; Volume 11; Issue 2; Pages: 259
In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e5025b9b08d5091899f759e42487419
https://www.mdpi.com/2079-9292/11/2/259
https://www.mdpi.com/2079-9292/11/2/259
Publikováno v:
Chinese Physics B. 32:017305
A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3021c14c04b5d359d50f9153e14676
https://doi.org/10.1088/1674-1056/ac6162
https://doi.org/10.1088/1674-1056/ac6162
Publikováno v:
2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9f12b9b020174df4b5748c661e9541
https://doi.org/10.1109/icece54449.2021.9674655
https://doi.org/10.1109/icece54449.2021.9674655
Publikováno v:
Semiconductor Science and Technology. 37:105017
A high-performance terahertz Schottky barrier diode (SBD) with a film-supported single mesa structure featuring a low structural parasitic with extremely low dielectric loss is reported in this brief. The fabricated substrate-free SBD is supported wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f72d0822136a95e09d7d0f6f589ed9b
https://doi.org/10.1088/1361-6641/ac8b2a
https://doi.org/10.1088/1361-6641/ac8b2a