Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Haomiao Wei"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 717-722 (2024)
The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of anodes by changing the diode arrangement to improve po
Externí odkaz:
https://doaj.org/article/2bc2ac599bd845e09dd8cd4a3a9842ff
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 43:983-994
This paper presents an accurate design method applied to the terahertz broadband multipliers. The design method is divided into two steps: a self-consistent electro-thermal (E-T) model with frequency-dependent spreading resistance and an external mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a080039838bbdb6ef647b18960266957
https://doi.org/10.21203/rs.3.rs-2292488/v1
https://doi.org/10.21203/rs.3.rs-2292488/v1
This paper presents a comprehensive electro-thermal (E-T) design method applied to the circuit design of the multipliers, which intends to improve the design flexibility and simulation reliability of the broadband frequency multiplier.The design meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ed1373be637fa894089ddb6fd311c68
https://doi.org/10.21203/rs.3.rs-2039838/v1
https://doi.org/10.21203/rs.3.rs-2039838/v1
Publikováno v:
2022 IEEE MTT-S International Wireless Symposium (IWS).
Publikováno v:
IEICE Electronics Express. 20:20230114-20230114
Autor:
Bo Wang, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding, Zhi Jin
Publikováno v:
Electronics, Vol 11, Iss 259, p 259 (2022)
Electronics; Volume 11; Issue 2; Pages: 259
Electronics; Volume 11; Issue 2; Pages: 259
In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique
Publikováno v:
Chinese Physics B. 32:017305
A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled pl
Publikováno v:
2021 IEEE 4th International Conference on Electronics and Communication Engineering (ICECE).
Publikováno v:
Semiconductor Science and Technology. 37:105017
A high-performance terahertz Schottky barrier diode (SBD) with a film-supported single mesa structure featuring a low structural parasitic with extremely low dielectric loss is reported in this brief. The fabricated substrate-free SBD is supported wi