Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Haolan Qu"'
Autor:
Jiaxiang Chen, Haitao Du, Haolan Qu, Han Gao, Yitian Gu, Yitai Zhu, Wenbo Ye, Jun Zou, Hongzhi Wang, Xinbo Zou
Publikováno v:
APL Machine Learning, Vol 2, Iss 2, Pp 026113-026113-9 (2024)
Artificial optoelectronic synaptic transistors have attracted extensive research interest as an essential component for neuromorphic computing systems and brain emulation applications. However, performance challenges still remain for synaptic devices
Externí odkaz:
https://doaj.org/article/f189e03ef7c94f0a87832329dd9628f8
Autor:
Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Yitian Gu, Yuxin Deng, Danni Su, Ruohan Zhang, Xing Lu, Xinbo Zou
Publikováno v:
Semiconductor Science and Technology. 38:015001
By deep level transient spectroscopy (DLTS), emission and capture behaviors have been explicitly investigated for a single electron trap in a Si-doped β-Ga2O3 epilayer. Trap characteristics including activation energy for emission (E emi = 0.8 eV),
Publikováno v:
Applied Physics Letters. 120:212105
Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron mobility transistors were explicitly investigated by optical deep level transient spectroscopy (ODLTS). By temperature-scanning ODLTS, three electron traps, nam
Publikováno v:
Asia Communications and Photonics Conference 2021.
Three hole traps and one electron trap were revealed for InGaN/GaN blue LEDs grown on Si by a combination of DLTS and ICTS. Time-resolved thermal-enhanced emission process of deep hole trap was investigated.
Autor:
Xinbo Zou, Yuanjie Lv, Haoxun Luo, Xing Lu, Haowen Guo, Jiaxiang Chen, HaoLan Qu, Baile Chen, Min Zhu
Publikováno v:
Semiconductor Science and Technology. 36:055015
We report the emission kinetics of a single-electron trap (E1, E C–0.63 eV) in Sn-doped ( 2 ˉ 01) β-Ga2O3 crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ( τ ) of the electrons emitted from the trap level E1 was