Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hao-Tang Hsu"'
Autor:
Hao-Tang Hsu, 許顥騰
100
Due to the growing evidence of global warming and climate change affected by greenhouse gases, as well as the shortage of water supply in Taiwan and the international trend for low carbon emission society, to seek for the reduction in carbon
Due to the growing evidence of global warming and climate change affected by greenhouse gases, as well as the shortage of water supply in Taiwan and the international trend for low carbon emission society, to seek for the reduction in carbon
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/hhx7kp
Autor:
Jone F. Chen, Kuei Fen Chang, Shang Feng Shen, Chia Yu Kao, Yen Lin Tsai, Hao Tang Hsu, Hann Ping Hwang
Publikováno v:
Semiconductor Science and Technology. 33:125019
The effect of doping concentration in the n− drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n− drift doping concentration improves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808123a3c3f911b850f3ec24726e0ff6
https://doi.org/10.1088/1361-6641/aaeb06
https://doi.org/10.1088/1361-6641/aaeb06
Publikováno v:
Japanese Journal of Applied Physics. 57:04FD01
Device characteristics and hot-carrier-induced device degradation of n-channel MOS transistors with an off-state breakdown voltage of approximately 25 V and various Si recess depths introduced by sidewall spacer overetching are investigated. Experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc9a9a7d571f82ed177e72fbe99179b
https://doi.org/10.7567/jjap.57.04fd01
https://doi.org/10.7567/jjap.57.04fd01
Autor:
Hung-Ju Chien, Li-Min Young, Chih-Yuan Chen, Chun-Chi Lai, Hao-Tang Hsu, Hsien-Chang Kuo, Wei-Lin Wang, Pei-Chia Chen, Chia-Yu Li, Tzung-Hua Ying, Ming-Hsin Yeh, Yi-Wen Lu
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE).
The integration process of W-plug landing on Cu line has been investigated systematically step-by-step. The process is divided into four steps, including pre-clean, Ti, TiN, and W depositions. The over-all contact resistance of the structure is succe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4551fa8afb6e69f1314f318b21b2dd31
https://doi.org/10.1109/isne.2015.7131983
https://doi.org/10.1109/isne.2015.7131983
Publikováno v:
Japanese Journal of Applied Physics. 55:08PD04
The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f25e356021d07aca65144f61e65e5f
https://doi.org/10.7567/jjap.55.08pd04
https://doi.org/10.7567/jjap.55.08pd04
Autor:
Hao Tang Hsu, Hann Ping Hwang, Chun Po Chang, Yu Ming Liu, Jone F. Chen, Yan Lin Tsai, Chih Yuan Chen
Publikováno v:
Japanese Journal of Applied Physics. 55:01AD03
In this study, off-state breakdown voltage (V BD) and hot-carrier-induced degradation in high-voltage n-type metal–oxide–semiconductor transistors with various BF2 implantation doses in the n− drift region are investigated. Results show that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b40293fc05b7da404ddd77208360dfb0
https://doi.org/10.7567/jjap.55.01ad03
https://doi.org/10.7567/jjap.55.01ad03
Autor:
Yin Chia Lin, Min Ti Yang, Chung Yi Lin, Hao Tang Hsu, Chin Rung Yan, Huei Haurng Chen, Chih Yuan Chen, Yu Jie Liao, Jone-Fang Chen
Publikováno v:
Japanese Journal of Applied Physics. 52:04CC07
Characteristics of lateral diffused metal–oxide–semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43378a7fde434ae347828f45ad063c42
https://doi.org/10.7567/jjap.52.04cc07
https://doi.org/10.7567/jjap.52.04cc07
Autor:
Yen-Lin Tsai, Jone F Chen, Shang-Feng Shen, Hao-Tang Hsu, Chia-Yu Kao, Kuei-Fen Chang, Hann-Ping Hwang
Publikováno v:
Semiconductor Science & Technology; Dec2018, Vol. 33 Issue 12, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; Aug2016, Vol. 55 Issue 8S2, p1-1, 1p