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pro vyhledávání: '"Hao-Ren Chen"'
Autor:
HAO-REN CHEN, 陳浩仁
106
In this experiment, Atomic Layer Deposition (ALD) is used to form a superlattice structure on the SiO2/Si substrate by forming an ZnO doped Al2O3(AZO) structure with zinc oxide stacked alumina and forming a ZnO doped HfO2 (HZO) film with zin
In this experiment, Atomic Layer Deposition (ALD) is used to form a superlattice structure on the SiO2/Si substrate by forming an ZnO doped Al2O3(AZO) structure with zinc oxide stacked alumina and forming a ZnO doped HfO2 (HZO) film with zin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/537w9q
Publikováno v:
Microsystem Technologies. 28:2215-2224
Publikováno v:
International Journal of Rock Mechanics and Mining Sciences. 153:105086
Autor:
Hao-Ren Cheng, 鄭皓仁
93
Objective: Temporal order memory deficit, especially abnormality of proactive interference, was frequently noted in patients with frontal lobe lesions. Neuropathological and neuroimaging studies revealed frontal-striatum-thalamus loop was dys
Objective: Temporal order memory deficit, especially abnormality of proactive interference, was frequently noted in patients with frontal lobe lesions. Neuropathological and neuroimaging studies revealed frontal-striatum-thalamus loop was dys
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/91024287160912218011