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of 9
pro vyhledávání: '"Hao-Ping Hong"'
Autor:
Hao-Ping Hong, 洪浩評
89
Compared with thin film transistor (TFT) liquid crystal displays (LCDs), the supertwisted nematic (STN) LCDs have become the enabling technology of low-cost flat panel displays. However, STN LCDs are still too sluggish to show video-rate imag
Compared with thin film transistor (TFT) liquid crystal displays (LCDs), the supertwisted nematic (STN) LCDs have become the enabling technology of low-cost flat panel displays. However, STN LCDs are still too sluggish to show video-rate imag
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53637604747932866246
Autor:
Chieh-Hsun Hsiao, Ting-Hsun Kuo, Che-Hao Meng, Hsin-Hung Chen, Chen-Yen Ho, Peng Chia-Sheng, Hao-Ping Hong, Lin Shih-Mei, Sung Da-Wei, Sheng-Hong Yan, Kuan Chien-Wei
Publikováno v:
ISSCC
Modulation schemes employed in long-term-evolution advanced (LTE-A) services for higher data-rate with high peak-to-average power ratios (PAPR) are becoming more complicated, which degrades the efficiency of RF power amplifiers (PA). Envelope-trackin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff774ccae1820ee8566b8fec4b2648e5
https://doi.org/10.1109/isscc.2018.8310369
https://doi.org/10.1109/isscc.2018.8310369
Autor:
Hao Ping Hong, Da Shin Lin
Publikováno v:
A-SSCC
A 0.5-V BJT-based thermal sensor design is first demonstrated in a 10-nm CMOS. A charge-pump technique is proposed for operating with a digital core supply voltage as low as 0.5 V without the restriction on forward junction bias (∼0.7V). A switched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82bd01ca98c3504db26417b7228966fa
https://doi.org/10.1109/asscc.2017.8240211
https://doi.org/10.1109/asscc.2017.8240211
Autor:
Jiin-Chuan Wu, Hao-Ping Hong
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:152-155
When MOSFET is used as a power switch, it is essential to prevent reverse current flow through the parasitic body diodes under reverse voltage condition. A new built-in reverse voltage protection circuit for MOSFETs has been developed. In this design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989c9cbff706029733c6fadef8d5fa22
https://doi.org/10.1109/4.896242
https://doi.org/10.1109/4.896242
Publikováno v:
ISSCC
High-data-rate wireless technologies such as HSUPA and LTE are power-hungry because of the fundamental correlation between data rate and transmit power. Furthermore, the high peak-to-average power ratio (PAPR) of the modulated signals causes a degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9239bcc2da87f52aa99d47afe0b80ebb
https://doi.org/10.1109/isscc.2013.6487771
https://doi.org/10.1109/isscc.2013.6487771
Autor:
Hao-Ping Hong, Jiin-Chuan Wu
Publikováno v:
IEEE Journal of Solid-State Circuits; Jan2001, Vol. 36 Issue 1, p152-155, 4p
Akademický článek
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Autor:
Hao-Ping Hong, Jiin-Chuan Wu
Publikováno v:
Proceedings of 1997 IEEE International Symposium on Circuits & Systems Circuits & Systems in the Information Age ISCAS '97; 1997, Issue 2, p1417-1417, 1p
Conference
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