Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Hao-Ling Tang"'
Autor:
Hao-Ling Tang, Alex Zettl, Ang-Yu Lu, Vincent Tung, Ju Li, Nannan Mao, Jing Kong, Mohammad Mahdi Tavakoli, Cong Su, Jiangtao Wang, Chao-Ching Cheng, Ming-Hui Chiu, Gregory Pitner, Tomas Palacios, Yuxuan Lin, Lain-Jong Li, Zhengyang Cai, Chih-I Wu, Jihoon Park, Pin-Chun Shen, Ang-Sheng Chou, Xiang Ji, Jeffrey Bokor
Publikováno v:
Nature. 593:211-217
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5342f4d65166a52a2bcde05b1f2e24e3
https://doi.org/10.1038/s41586-021-03472-9
https://doi.org/10.1038/s41586-021-03472-9
Autor:
Ming-Hui Chiu, Hao Ling Tang, Chih Piao Chuu, Xuechun Zhang, Yi Wan, Vincent Tung, Ci Lin, Jing Kai Huang, Wen-Hao Chang, Chun Wei Huang, Ching-Ming Wei, Lain-Jong Li, Chien Ju Lee, Areej Aljarb, Sean Li, Wei Ting Hsu
Publikováno v:
ACS Materials Letters. 3:442-453
Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics. How...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cada9f0b13202b96afdae73cc7892601
https://doi.org/10.1021/acsmaterialslett.0c00554
https://doi.org/10.1021/acsmaterialslett.0c00554
Autor:
Kuo-Wei Huang, Lain-Jong Li, Chih-Wen Yang, Shahid Sattar, Yi Wan, Jing Kong, Hao-Ling Tang, Ming-Hui Chiu, Chia-Hao Chen, Vincent Tung
Publikováno v:
ACS Materials Letters. 2:1351-1359
Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenides (TMDs) monolayer materials in a chosen sequence hold tantalizing prospects...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9d317b0e6abc514ff50c2a0f64a9b1
https://doi.org/10.1021/acsmaterialslett.0c00254
https://doi.org/10.1021/acsmaterialslett.0c00254
Autor:
Yi Wan, Steven J. Jonas, Xuan Wei, Xiaochen Dong, Cailing Chen, Yichen Cai, Yu Han, Areej Aljarb, Hao-Ling Tang, Vincent Tung, Chi-Wen Yang, Jie Shen, Jui-Han Fu, Kuo-Wei Huang
Publikováno v:
Science advances, vol 6, iss 48
Science Advances
Science Advances
Heterogeneous integration of robust hydrogel and soft MXene shows multifunctional sensing.
Skin-mountable microelectronics are garnering substantial interest for various promising applications including human-machine interfaces, biointegrated de
Skin-mountable microelectronics are garnering substantial interest for various promising applications including human-machine interfaces, biointegrated de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beab5ab56267dd5c96e1225b6502b29e
https://doi.org/10.1126/sciadv.abb5367
https://doi.org/10.1126/sciadv.abb5367
Autor:
Fei Xue, Lain-Jong Li, Ming-Hui Chiu, Bin Cheng, José Ramón Durán Retamal, Mei-Hsin Chen, Jr-Hau He, Chih-I Wu, Hao-Ling Tang, Ko-Chun Lee, Chenhsin Lien, Weijin Hu
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Recently, the demonstration of the ferroelectricity of $\alpha$ phase In 2 Se 3 $(\alpha -$In 2 Se 3 ) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e724cec5c0124a7e1ac22465fc1ce57f
https://doi.org/10.1109/vlsi-tsa48913.2020.9203707
https://doi.org/10.1109/vlsi-tsa48913.2020.9203707
Autor:
Pin-Chun, Shen, Cong, Su, Yuxuan, Lin, Ang-Sheng, Chou, Chao-Ching, Cheng, Ji-Hoon, Park, Ming-Hui, Chiu, Ang-Yu, Lu, Hao-Ling, Tang, Mohammad Mahdi, Tavakoli, Gregory, Pitner, Xiang, Ji, Zhengyang, Cai, Nannan, Mao, Jiangtao, Wang, Vincent, Tung, Ju, Li, Jeffrey, Bokor, Alex, Zettl, Chih-I, Wu, Tomás, Palacios, Lain-Jong, Li, Jing, Kong
Publikováno v:
Nature. 593(7858)
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0abb639a770bfd7bd86f206b68b123c9
https://pubmed.ncbi.nlm.nih.gov/33981050
https://pubmed.ncbi.nlm.nih.gov/33981050
Autor:
Dishan Abeysinghe, Xixiang Zhang, Keji Lai, Ali Han, Allan H. MacDonald, Chao Lei, Jiamin Quan, Matthew Staab, Xiaoqin Li, Zhaodong Chu, Chun-Yuan Wang, Xuejian Ma, Vincent Tung, Hao-Ling Tang, Chih-Kang Shih, Chenhui Zhang
Publikováno v:
Proc Natl Acad Sci U S A
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17aee1956dbe952d9f70d9ae030a8834
http://arxiv.org/abs/2003.01817
http://arxiv.org/abs/2003.01817
Autor:
Kuan-Jhih Hou, Chien-Chih Tseng, Yen-Fu Lin, Chenhsin Lien, Lain-Jong Li, Ming-Hui Chiu, Jing-Kai Huang, Shih-Hsien Yang, Sung-Yen Wei, Hao-Ling Tang
Publikováno v:
ACS Nano. 11:12817-12823
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c69c96f56b9c893ef26a8116037f55
https://doi.org/10.1021/acsnano.7b07755
https://doi.org/10.1021/acsnano.7b07755
Autor:
Che-Yi Lin, Vincent Tung, Feng-Shou Yang, Shih-Hsien Yang, Hao-Ling Tang, Yen-Fu Lin, Ming-Hui Chiu, Chenhsin Lien, Yumeng Shi, Mengjiao Li, Ko-Chun Lee, Yong Xu, Lain-Jong Li
Publikováno v:
Advanced Electronic Materials. 7:2100355
This work was supported by the Taiwan Ministry of Science and Technology (Grant No. MOST 108-2112-M-005-012-MY3 and 109-2112-M-005-013-MY3), and also supported in part by the National Natural Science Foundation of China under Grant No. 61974070 and 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b904b806d298fd8f3625f3363601727
https://doi.org/10.1002/aelm.202100355
https://doi.org/10.1002/aelm.202100355
Autor:
Jing Kai Huang, David A. Muller, Hao Ling Tang, Xixiang Zhang, Yi Wan, Taishi Takenobu, Lain-Jong Li, Chien Chih Tseng, Wen-Hao Chang, Vincent Tung, Yimo Han, Areej Aljarb, Ming-Hui Chiu, Jui Han Fu
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(18)
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5387e16d16909233fb517c6d23f1a305
https://pubmed.ncbi.nlm.nih.gov/30907033
https://pubmed.ncbi.nlm.nih.gov/30907033