Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hao-Che Cheng"'
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075307-075307-8 (2023)
This paper proposes a solution to mitigate the trade-off between dark and photocurrents in the indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as ultraviolet photodetectors, by using a stacked Pt/NiO dual capping layer
Externí odkaz:
https://doaj.org/article/7282a730e6854a799c83695a720630e3
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1006
Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark curren
Autor:
Qi-Yu Huang, Yu-Ru Liu, Yu-Chien Kuo, Po-Sheng Lee, Yu-Wun Huang, Chun-Ying Huang, Shan-Wen Lin, Pei-Te Lin, Fang-Chi Lo, Hao-Che Cheng
Publikováno v:
Organic Electronics. 68:212-217
IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the suc